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101.
Zhengmao Ye Campbell J.C. Zhonghui Chen Eui-Tae Kim Madhukar A. 《Quantum Electronics, IEEE Journal of》2002,38(9):1234-1237
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. 相似文献
102.
103.
In this paper we consider a wavelet algorithm for the piecewise constant collocation method applied to the boundary element solution of a first kind integral equation arising in acoustic scattering. The conventional stiffness matrix is transformed into the corresponding matrix with respect to wavelet bases, and it is approximated by a compressed matrix. Finally, the stiffness matrix is multiplied by diagonal preconditioners such that the resulting matrix of the system of linear equations is well conditioned and sparse. Using this matrix, the boundary integral equation can be solved effectively. 相似文献
104.
Accuracy of approximations in MOSFET charge models 总被引:2,自引:0,他引:2
This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem 相似文献
105.
The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described 相似文献
106.
In antenna design there are some fundamental relationships based on reciprocity. The equivalence of antenna pattern in transmission and reception is well known. Less well known is the time-derivative relationship going from reception to transmission. These relationships are derived here and expressed in various useful forms. Electric and magnetic dipoles are given special consideration, and the combined form constructed as a terminated TEM transmission line (the BTW antenna) is discussed for its transmission and reception properties 相似文献
107.
Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication 相似文献
108.
Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo
Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom
Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void
and the hillock reached the critical length for electromigration at the given current density. A modified equation for the
drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform
depletion are more reliable than those with uniform depletion. 相似文献
109.
110.