Graphene-based heterojunction for enhanced photodetectors

Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.     

Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules

This paper reports that the polymer/organic heterojunction doped light-emitting diodes using a novel poly-TPD as hole transport material and doping both hole transport layer and emitter layer with the highly fluorescent rubrene and DCJTB has been successfully fabricated. The basic structure of the heterostructure is PTPD/Alq₃. When hole transport layer and electron transport layer are doped simultaneously with different dopant, the electroluminescence quantum efficiencies are about 3 times greater than that of the undoped device. Compared with undoped device and conventional TPD/Alq₃ diode, the stability of the doping device is significantly improved. The process of emission for doped device may include carrier trapping as well as F\"{o}rster energy transfer.     

场助InGaAsP/InP异质结半导体光电阴极的研究

本文通过对InGaAsP/InP场助异质结半导体光电阴极的材料生长、场助肖特基结的制备及阴极激活等工艺的系统研究,研制出具有较高光谱响应的半导体光电阴极,生长出优于文献报道的晶格失配率标准的材料,得到相当80年代国际水平理想因子值的场助肖特基结,用实验数据介绍提高量子效率数量级的方法和条件.研究结果表明场助异质半导体光电阴极是在红外波段很有潜力的光电发射体.     

The effect of annealing treatment on the performance of bulk heterojunction solar cells with donor and acceptor different weight ratios

Bulk heterojunction organic solar cells(OSCs) based on the blend of poly(2-methoxy-5(2'-ethyl-hexyloxy)-1,4-phenylenevinylene(MEH-PPV) and [6,6]-phenyl C61 butyric acid methyl ester(PCBM) with different weight ratios(from 1:3 to 1:5) have been fabricated and the effect of annealing treatment on the performance of OSCs has also been studied.Experimental results point to the best optimized doping concentration 1:4 for MEH-PPV:PCBM.Furthermore,it is found that the devices with annealing treatment at 150℃ with ...     

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.     

异质结碳纳米管的热整流效率

采用非平衡分子动力学方法, 通过分别控制异质结碳纳米管管径、手性和平均温度的方式研究了异质结碳纳米管的热整流效应. 研究表明, 随着异质结碳纳米管两端几何不对称性的增强, 其热整流效率会随之上升, 而异质结碳纳米管两端的手性的改变和夹角的大小都会对热整流效率产生一定的影响. 热整流效率会随着碳纳米管平均温度的上升而下降. 研究异质结碳纳米管热整流效率对于热二极管、碳纳米散热元器件等潜在应用价值有理论指导作用.     

有机体异质结太阳能电池的数值分析

介绍了一种有机体异质结太阳能电池的数值模拟方法,模型使用Onsager提出的成对复合理论,并结合了完善的无机半导体理论而提出来的,其结果与实验结果符合较好,证明了模型的正确性.在此基础上分析了器件的内建电场与工作温度对器件性能的影响,以及影响器件光电流的主要因素. 关键词： 有机太阳能电池 体异质结 数值分析     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.     

具有异质结的富勒烯C60/酞菁纳米复合材料的可见光响应光催化应用

通过再沉淀法制备了富勒烯C60/酞菁的复合纳米微粒。这种复合纳米微粒由于C60分子和酞菁分子间的-相互作用而具有电子给体-受体（donor-acceptor）结构,而且这种微粒的尺寸可通过选择再沉淀过程中使用的溶剂来进行控制。此外,这种微粒与Nafion结合后,表现出去除三甲胺的光催化性能,而且其光催化活性优于C60微粒/Nafion或酞菁微粒/Nafion复合物。该结果表明电子给体-受体结构可通过促进有机半导体的电荷分离来增强光催化的性能,从而揭示了一种新颖的基于电子给体-受体结构的有机光催化剂。     

Photovoltage analysis of a heterojunction solar cell

According to the p-n junction model of Shockley,the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p-n junction solar cell is analysed.The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell.When the photovoltage exceeds the built-in voltage under illumination,the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I-V characteristic is given.     

Simulation of polarization effects in AlGaN/GaN heterojunction

Because of their large band-gap, large high-field electron velocity, large breakdownfield, and large thermal conductivity, GaN and its heterojunction with AlGaN and InGaNhave foreseeable potential in the applications of high-power/temperature electronics, andoptoelectronic devices operative in UV and visible wavelength. Polarization inducedelectric field can reach the magnitude of ~MV/cm[1,2]. For AlGaN/GaN based FETs theconcentration of sheet carrier induced by polarization in the cha…     

超结硅锗碳异质结双极晶体管机理研究与特性分析优化

提出一种超结硅锗碳异质结双极晶体管(SiGeC HBT)新结构.详细分析了新结构中SiGeC基区和超结结构的引入对器件性能的影响,并对其电流输运机制进行研究.基于SiGeC/Si异质结技术,新结构器件的高频特性优良;同时超结结构的存在,在集电区内部水平方向和垂直方向都建立了电场,二维方向上的电场分布相互作用大大提高了新结构器件的耐压能力.结果表明:超结SiGeC HBT与普通结构SiGeC HBT相比,击穿电压提高了48.8%;更重要的是SiGeC HBT器件中超结结构的引入,不会改变器件高电流增益、高频率特性的优点;新结构器件与相同结构参数的Si双极晶体管相比,电流增益提高了10.7倍,截止频率和最高震荡频率也得到了大幅度改善,很好地实现了高电流增益、高频率特性和高击穿电压三者之间的折中.对超结区域的柱区层数和宽度进行优化设计,随着柱区层数的增多,击穿电压显著增大,电流增益有所提高,截止频率和最高震荡频率减低,但幅度很小.综合考虑认为超结区域采用pnpn四层结构是合理的.     

AlGaInP四元系材料渐变异质结及其在高亮度发光二级管器件中的应用

引入渐变理论，通过建立AlGaInP四元系材料渐变异质结能带简单模型，分析在渐变长度相同、不同渐变方式下导带边的情况.分析不同掺杂浓度下，渐变区长度变化对势垒尖峰值和n区电势能之间差值的影响.讨论了渐变方式引入高亮度发光二极管(HB LED)器件的作用和意义. 关键词： 镓铝铟磷 异质结 渐变 二极管     

Direct measurement of the interfacial barrier height of the manganite p–n heterojunction

A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.     

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.     

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline (PANI) derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. Of the film, the side with being irradiated by UV light during preparation is represented as `A side'; the other side without being irradiated is represented as `N side'. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the {current--voltage} characteristic curves with the values of rectifying ratio (γ) being 20 at ±0.06 V at T= 77K and 4 at ±0.02V at T=300 K separately.     

Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability

With the aid of a thermal-electrical model,a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed.The method can effectively enhance the thermal stability of the devices without sacrificing the design time.Taking a 40-finger heterojunction bipolar transistor for example,the device with non-uniform emitter finger lengths is optimized and fabricated.Both the theoretical and the experimental results show that,for the optimum device,the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length.Furthermore,the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases,which is ascribed to the improvement of the thermal resistance in the optimum device.A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths.     

Free energy loss analysis of heterojunction solar cells

For the first time we present a free energy loss analysis (FELA) of heterojunction silicon solar cells (HSSC) to study the influence of the intrinsic buffer layer thickness (t_buffer) on the solar cell efficiency (η). The main advantage of the FELA is that the impact of various loss mechanisms can be directly expressed in absolute percentage of η. Furthermore, it is possible to extract the magnitude of every loss for each region of the solar cell. All quantities required to perform the FELA are obtained by the simulation software AFORS‐HET. The FELA yields an optimum efficiency of 21.24% for t_buffer ≈ 5 nm. The efficiency drop for t_buffer £ 5 nm is ascribed to a lower maximum usable generated power Φ_G(22.84% @ 2 nm, 23.98% @ 5 nm). Lower efficiencies for t_buffer ³ 5 nm are attributed to the increased transport loss of holes in the intrinsic buffer layer (0.05% @ 2 nm, 0.65% 8 nm). The η values yielded by the FELA are in agreement with the ones calculated by AFORS‐HET, demonstrating the applicability of the FELA to the HSSC concept. Therewith, we demonstrate that the FELA can be employed to obtain a deeper understanding of the HSSC concept. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)