溶剂萃取石墨炉原子吸收光谱测定盐卤中痕量铷

采用石墨炉原子吸收光谱（ＧＦＡＡＳ）研究盐卤中铷的原子化行为和机理,建立了热解石墨管,ＫＮＯ３－ＮＨ４ＮＯ３基体改进剂,１８－冠－６,溴百里香酚蓝,氯仿萃取分离ＧＦＡＡＳ测定盐卤铷的方法。用于测定盐卤中痕量铷,特征质量１．１×１０＾－１０ｇ／０．００４４,加标回收率８９％￣１１０％;相对标准偏差６．２８％（ｎ＝１３）。     

气基磁化焙烧回收包头稀土尾矿中铁的研究

试验采用磁化焙烧-磁选的方法来回收包头稀土尾矿中的Fe。考察了还原球团的粒径、焙烧温度、还原气体的成分、还原气气体流量、焙烧时间对于磁化焙烧回收Fe的影响。在焙烧温度为580℃,CO与CO2的浓度比为40∶60,还原气体气流量为1.2 L·min-1,焙烧时间为60 min的条件下对球团进行磁化焙烧,并将焙烧后的球团进行磨矿,使得-200目的物料占物料总重量的95%。将磨矿后的物料置于磁场强度为233 k A·m-1的磁选管中进行磁选,可以得到品位为60%左右的铁精矿,其铁回收率达到70%左右。     

浊点萃取-火焰原子吸收光谱法测定荔枝和桂圆肉中痕量铜

建立以二乙基二硫代氨基甲酸钠(DDT℃)为配位剂、TritonX-114为表面活性剂的浊点萃取-火焰原子吸收测定荔枝和桂圆肉中痕量铜的方法.研究了溶液pH值、配位剂类型与浓度、表面活性剂类型与浓度、平衡温度和平衡时间等实验条件对浊点萃取效率的影响.在最优的实验条件下,该方法测定铜的检出限为0.8μg/L,相对于传统火焰...     

新型可调节叶片喷嘴的结构及气动设计

本文针对低温余热能量回收透平装置设计了一种新型的可调节叶片喷嘴机构(Rotatable Vaned Nozzle,RVN),该设计具有结构新颖、可靠性高的特点.在调节结构设计的基础上,采用CFD方法对叶片喷嘴内流动特性进行了数值分析,研究了不同转动角度对喷嘴性能的影响.     

摆动式声多普勒效应实验仪

针对现有的声多普勒效应实验装置中存在的问题,设计并制作了摆动式声多普勒效应实验仪.该仪器能够分别进行声源运动和观察者运动的声多普勒效应实验,且可定量分析频偏和测量速度.本文详细介绍了该仪器的原理、构造、特点和实验过程,并对实验结果进行了较为全面的分析.     

基于阿贝正弦条件的光子等频图和能带结构测试系统

通过结合电磁波在周期性纳米材料中的传播特性以及阿贝完备成像理论中的阿贝正弦条件,提出了一种快速测试光子等频图和能带结构的测试技术和光学检测系统。将无限筒长显微物镜作为一种把波矢空间直接转换到实空间的变换器件,并通过配备二维面阵CCD的光栅光谱仪实现了对周期性纳米材料的等频图和能带结构的一次性拍照,真正实现了方便、快速和无损的探测技术。利用自行搭建的测试系统对用自组装方法制备的二维周期性纳米材料进行了相关光学测试,通过实验测试结果和相关理论计算的对比验证了系统的可行性和可靠性,从而说明该光学系统在研究周期性纳米材料的光学特性方面具有一定的优势。     

基于时域有限差分法分析等离子波导和介质波导耦合

使用Rsoft软件中的时域有限差分模块Fullwave分析二维介质波导和等离子波导耦合特性,利用软件仿真耦合结构并自动计算出光在介质波导和等离子波导中传输的耦合效率,进而测绘耦合效率随波导尺寸和光波长的变化曲线图,发现MDM导波结构的缝隙宽度和光通信质量密切相关,在确定尺寸下,传输损耗随传输距离成指数衰减.根据分析得到的耦合效率变化规律发现介质波导和等离子波导间距最佳点都应设为15 nm,进而优化波导的几何结构参数后,可以将耦合效率提高到83%.     

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.     

A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

A novel low specific on-resistance(R on,sp) silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(pLDMOS) compatible with high voltage(HV) n-channel LDMOS(nLDMOS) is proposed.The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state(BP SOI pLDMOS).Its superior compatibility with the HV nLDMOS and low voltage(LV) complementary metal-oxide semiconductor(CMOS) circuitry which are formed on the N-SOI layer can be obtained.In the off-state the P-buried layer built in the NSOI layer causes multiple depletion and electric field reshaping,leading to an enhanced(reduced) surface field(RESURF) effect.The proposed BP SOI pLDMOS achieves not only an improved breakdown voltage(BV) but also a significantly reduced Ron,sp.The BV of the BP SOI pLDMOS increases to 319 V from 215 V of the conventional SOI pLDMOS at the same half cell pitch of 25 μm,and R on,sp decreases from 157 mΩ·cm2 to 55 mΩ·cm2.Compared with the PW SOI pLDMOS,the BP SOI pLDMOS also reduces the R on,sp by 34% with almost the same BV.     

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.