| 微圆盘电极技术测定表面化学微加工时的约束刻蚀剂浓度分布 |
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| 引用本文： | 汤儆,马信洲,何辉忠,张力,林密旋,曲东升,丁庆勇,孙立宁.微圆盘电极技术测定表面化学微加工时的约束刻蚀剂浓度分布[J].物理化学学报,2006,22(4):507-512. |
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| 作者姓名： | 汤儆 马信洲 何辉忠 张力 林密旋 曲东升 丁庆勇 孙立宁 |
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| 作者单位： | Depeartment of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China; The Institute of Robots, Harbin Institute of Technology, Harbin 150001, P. R. China |
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| 基金项目： | 国家科技攻关项目;福建省自然科学基金 |
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| 摘 要： | 利用微圆盘电极技术, 测定了KBr、L-胱氨酸和硫酸组成的刻蚀溶液体系中Pt电极表面电化学氧化产生的刻蚀剂Br2浓度分布, 为约束刻蚀剂层技术(CELT)中刻蚀体系的选择和优化提供更直观的依据. GaAs表面CELT微加工实验证明了用微圆盘电极测得的表面刻蚀剂的浓度分布趋势与微加工实验所得到的结果一致
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| 关 键 词： | 约束刻蚀剂层技术 微圆盘电极 L-胱氨酸 GaAs 浓度分布 |
| 收稿时间： | 2005-09-27 |
| 修稿时间： | 2005-11-14 |
Concentration Protile of Etchant Measured by Microelectrode Technique in the Process of Chemical Micromachining |
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| TANG Jing,MA Xin-Zhou,HE Hui-Zhong,ZHANG Li,LIN Mi-Xuan,QU Dong-Sheng,DING Qing-Yong,SUN Li-Ning.Concentration Protile of Etchant Measured by Microelectrode Technique in the Process of Chemical Micromachining[J].Acta Physico-Chimica Sinica,2006,22(4):507-512. |
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| Authors: | TANG Jing MA Xin-Zhou HE Hui-Zhong ZHANG Li LIN Mi-Xuan QU Dong-Sheng DING Qing-Yong SUN Li-Ning |
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| Institution: | Depeartment of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China; The Institute of Robots, Harbin Institute of Technology, Harbin 150001, P. R. China |
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| Abstract: | A carbon-disk microelectrode was used to investigate the surface concentration profile of etchant Br2, which was electrogenerated on the Pt working electrode. The steady state reducing currents of Br2 at different distances away from the Pt electode was measured. The concentration profile was estimated from the current-distance variation curves as a function of different sampling times. Experimentally determined concentration profiles are in good agreement with those estimated from the microetching results. The microelectrode technique has offered a good method to choose suitable etching solution for chemical micromachining. |
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| Keywords: | Confined etchant layer technique (CELT) Microelectrode L-cystine GaAs Concentration profile |
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