Low capacitance CMOS silicon photodetectors for optical clock injection |
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Authors: | S Latif S E Kocabas L Tang C Debaes and D A B Miller |
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Institution: | (1) Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA;(2) Department of Applied Physics, Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA;(3) Department of Applied Physics and Photonics, Vrije Universitiet Brussel, Brussels, 1050, Belgium |
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Abstract: | We have studied the response of CMOS compatible detectors fabricated in a silicon-on-sapphire (SOS) process, operated under
short pulse excitation in the blue. These high speed, low capacitance detectors would be suitable for very precise, surface-normal
clock injection with silicon CMOS. We characterize the capacitance of the detector structure through a combination of experimental
techniques and circuit-level and electromagnetic simulations. The transit-time-limited response of the detectors is validated
through pump–probe experiments. Detector response times of ∼35 ps have been measured, and devices have capacitance as low
as ∼4 fF. |
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Keywords: | PACS" target="_blank">PACS 42 82 Ds 85 40 -e 85 60 Bt 85 60 Gz |
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