Laser-induced etching of silicon |
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Authors: | C H Choy K W Cheah |
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Institution: | (1) Physics Department, Hong Kong Baptist University, Kowloon, Hong Kong |
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Abstract: | Conventional fabrication method of porous silicon is anodisation of single crystal silicon in hydrofluoric acid. In this report, we show that it is possible to fabricate porous silicon by laser-induced etching. An earlier report by us has demonstrated the dependence of porous silicon photoluminescence characteristic on the etching laser wavelength 1]. Here we used 780 nm line from a diode laser as the etching source, and the optimum etching conditions were obtained. A simple model was proposed to explain the etching process. Scanning Electron Microscope (SEM) images of the samples support the proposed process. |
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Keywords: | 78 65 81 60 Cp 82 50 |
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