| Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact |
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| 作者姓名： | 赵德胜 张书明 段俐宏 王玉田 江德生 刘文宝 张宝顺 杨辉 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 摘 要： | Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 × 10^-4 Ωcm^2 is obtained at annealing temperature of 550^o C.
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| 关 键 词： | 光电子学 电离子 银 电子发射 |
| 收稿时间： | 2007-1-13 |
| 修稿时间： | 2007-01-13 |
Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact |
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| ZHAO De-Sheng,ZHANG Shu-Ming,DUAN Li-Hong,WANG Yu-Tian,JIANG De-Sheng,LIU Wen-Bao,ZHANG Bao-Shun,YANG Hui.Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact[J].Chinese Physics Letters,2007,24(6):1741-1744. |
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| Authors: | ZHAO De-Sheng ZHANG Shu-Ming DUAN Li-Hong WANG Yu-Tian JIANG De-Sheng LIU Wen-Bao ZHANG Bao-Shun YANG Hui |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | |
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| Keywords: | 81 05 Ea 73 40 -c 61 10 Nz |
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