| Effect of annealing on photoluminescence and microstructures of InGaN／GaN multi-quantum well with Mg-doped p-type GaN |
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| 引用本文： | 李忠辉,于彤军,杨志坚,冯玉春,张国义,郭宝平,牛憨笨.Effect of annealing on photoluminescence and microstructures of InGaN／GaN multi-quantum well with Mg-doped p-type GaN[J].中国物理 B,2005,14(4):830-833. |
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| 作者姓名： | 李忠辉 于彤军 杨志坚 冯玉春 张国义 郭宝平 牛憨笨 |
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| 作者单位： | Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060}, China;School of Materials, Changchun University of Science and Technology, Changchun,130022, China;School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China;State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing,100871, China;State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing,100871, China;Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060}, China;State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing,100871, China;Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060}, China;Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060}, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos 60376005 and 60276010),the Natural Science Foundation of Guangdong Province, China (Grant No04300863), the Postdoctoral Foundation of China (Grant No2004036356) and the Keystone Programme of Guangdong Province, China(No ZB2003A07) |
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| 摘 要： |
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| 关 键 词： | 光致发光 退火效应 微观结构 氮化镓 半导体 量子井 |
| 收稿时间： | 2004-05-14 |
Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN |
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| Li Zhong-Hui,Yu Tong-Jun,Yang Zhi-Jian,Feng Yu-Chun,Zhang Guo-Yi,Guo Bao-Ping and Niu Han-Ben.Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN[J].Chinese Physics B,2005,14(4):830-833. |
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| Authors: | Li Zhong-Hui Yu Tong-Jun Yang Zhi-Jian Feng Yu-Chun Zhang Guo-Yi Guo Bao-Ping and Niu Han-Ben |
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| Abstract: | InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900${^\circ}$C, both the red-shift and the blue-shift of the photoluminescence (PL) peak, the decreased and the enhancement of the PL intensity were observed. The transmission electron microscopic images showed that InGaN multi-quantum-dots-like (MQD-like) structures with dimensions less than 5$\tm$10nm were formed in InGaN wells. The changes of PL spectra could be tentatively attributed to the competition between the red-shift mechanism of the quantum-confined Stark effect and the blue-shift mechanism of the quantum size effect due to MQD-like structures. |
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| Keywords: | InGaN rapid-thermal-annealing multi-quantum well |
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