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Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation |
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| Authors: | CH Chen HH Hsieh DC Yan JJ Kai |
| Institution: | a Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan b Nuclear Science and Technology Development Center, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan c Department of Electrical Engineering, Chung Cheng Institute of Technology, Taoyuan 335, Taiwan d Academia Sinica Institute of Physics, Taiwan e Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan |
| Abstract: | Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. |
| Keywords: | 75 50 Pp 75 30 Gw 61 85 +p 61 80 Jh 68 55 Jk |
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