| 大功率GaAs光导开关寿命实验研究 |
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| 引用本文： | 刘宏伟,袁建强,刘金锋,李洪涛,谢卫平,江伟华.大功率GaAs光导开关寿命实验研究[J].强激光与粒子束,2010,22(4). |
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| 作者姓名： | 刘宏伟 袁建强 刘金锋 李洪涛 谢卫平 江伟华 |
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| 作者单位： | 1. 中国工程物理研究院 流体物理研究所， 四川 绵阳 621900； 2. 清华大学 电机系， 北京 100084 |
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| 基金项目： | 国家自然科学基金项目，中国工程物理研究院科学技术发展基金面上项目 |
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| 摘 要： | 设计并制作了18 mm间隙的半绝缘GaAs光导开关,开关芯片采用标准半导体工艺制作并封装在陶瓷基板上。测试了光导开关在20 kV工作电压、1 kA工作电流时,不同重复频率工作的开关寿命,结果表明,开关寿命4 000次~7 000次,且随着重复频率的提高,开关寿命有所降低。初步分析了导致开关失效的原因为热损伤,包括局部发热导致的连接损伤和材料损伤以及整体发热导致的暗态电阻下降。
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| 关 键 词： | 砷化镓 光导开关 寿命 大功率 |
| 收稿时间： | 1900-01-01; |
Experimental investigation on lifetime of high power GaAs photoconductive semiconductor switch |
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| LiuHongwei,YuanJianqiang,LiuJinfeng,LiHongtao,XieWeiping,JiangWeihua.Experimental investigation on lifetime of high power GaAs photoconductive semiconductor switch[J].High Power Laser and Particle Beams,2010,22(4). |
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| Authors: | LiuHongwei YuanJianqiang LiuJinfeng LiHongtao XieWeiping JiangWeihua |
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| Institution: | 1. Institute of Fluid Physics, CAEP, P. O. Box 919-108, Mianyang 621900, China;2. Department of electrical engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | Photoconductive semiconductor switch(PCSS) with a gap of 18 mm was fabricated from semi-insulating GaAs.Lifetime tests of the PCSS were performed at different repetition rate.Accumulation and dissipation of heat in the switch's running process was analyzed with the test results.Heat accumulation has an important effect on the lifetime of the switch.When the accumulation power of heat is higher than the dissipation power of heat,the temperature of the chip rises and the resistence reduces.As a results,the le... |
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| Keywords: | GaAs photoconductive semiconductor switch lifetime high power |
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