| Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films |
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| 引用本文： | 赵璐冰,于彤军,吴洁君,杨志坚,张国义.Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films[J].中国物理 B,2010,19(1):520-523. |
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| 作者姓名： | 赵璐冰 于彤军 吴洁君 杨志坚 张国义 |
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| 作者单位： | Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China;Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China;Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China;Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China;Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos. 60676032, 60577030
and 60476028) and the National Basic Research Program of China
(Grant No. 2007CB307004) and the National Science Foundation for
Post-doctoral Scientists of China (Grant No. 20060400018). |
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| 摘 要： | Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of Ⅴ/Ⅲ ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. Ⅴ/Ⅲ ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the 100] direction. When the Ⅴ/Ⅲ ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.
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| 关 键 词： | non-polar GaN Ⅴ/Ⅲ ratio anisotropy migration length |
| 修稿时间： | 6/4/2009 12:00:00 AM |
Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films |
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| Zhao Lu-Bing,Yu Tong-Jun,Wu Jie-Jun,Yang Zhi-Jian and Zhang Guo-Yi.Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films[J].Chinese Physics B,2010,19(1):520-523. |
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| Authors: | Zhao Lu-Bing Yu Tong-Jun Wu Jie-Jun Yang Zhi-Jian and Zhang Guo-Yi |
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| Institution: | Research Center for Wide Gap Semiconductors, Peking University, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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| Abstract: | Non-polar a-plane (11\bar 20) GaN films have been grown
on r-plane (1\bar 102) sapphire substrates by metal organic
chemical vapour deposition. The influences of V/III ratio on the
species diffusion anisotropy of a-plane GaN films were
investigated by scanning electron microscopy, cathodoluminescence
and high-resolution x-ray diffraction measurements. The anisotropy
of a-plane GaN films may result from the different migration
length of adatoms along two in-plane directions. V/III ratio has an
effect on the growth rates of different facets and crystal quality.
The stripe feature morphology was obviously observed in the film with
a high V/III ratio because of the slow growth rate along the 1\bar 100]
direction. When the V/III ratio increased from 1000 to 6000, the
in-plane crystal quality anisotropy was decreased due to the
weakened predominance in migration length of gallium adatoms. |
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| Keywords: | non-polar GaN V/III ratio anisotropy migration length |
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