| 优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究 |
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| 引用本文： | 高鸿楷,朱作云.优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究[J].光子学报,1993,22(2):189-192. |
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| 作者姓名： | 高鸿楷 朱作云 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 710068
(高鸿楷，龚平，王海滨)，西安电子科技大学 710071
(朱作云)，西安电子科技大学 710071(李跃进) |
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| 摘 要： | 用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。
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| 关 键 词： | MOCVD 异质结 砷化镓 铝镓砷 硅 |
| 收稿时间： | 1992-05-11 |
INVESTIGATION OF MOCVD GROWTH OF GaAs AND ALGaAs ON SI SUBSTRATE |
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| Gao Hongkai,Gong Ping,Wang HaibinXi'an Institue of Optics and Precision Mechanics,Academia Sinica,Zhu Zuoyun,Li YuejinXidian University,Xi'an.INVESTIGATION OF MOCVD GROWTH OF GaAs AND ALGaAs ON SI SUBSTRATE[J].Acta Photonica Sinica,1993,22(2):189-192. |
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| Authors: | Gao Hongkai Gong Ping Wang HaibinXi'an Institue of Optics and Precision Mechanics Academia Sinica Zhu Zuoyun Li YuejinXidian University Xi'an |
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| Institution: | Gao Hongkai,Gong Ping,Wang HaibinXi'an Institue of Optics and Precision Mechanics,Academia Sinica,710068Zhu Zuoyun,Li YuejinXidian University,Xi'an 710071 |
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| Abstract: | High guality epilayers of GaAs and AlGaAs on Si substrates were obtained in a self-made atmospheric pressure MOCVD system. After high temperature annealing of Si substrates, two-step growth method were used in growth of GaAs and AlGaAs epilayers, The epilayer of GaAs on Si were measured by x-ray double-crystal diffractometry. The half-width of the peak of the rocking curve of the GaAs epilayer was 200 arc sec. The half-width of the PL spectrum at 77K of GaAs and AlGaAs was 17meV and 24meV respectively. |
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| Keywords: | MOCVD Heterojunction GaAs AlGaAs Si |
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