The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.     

Synthesis of Cu–Cr diketo,sublimable, eutectic composite complex,rod crystals from LDH as suitable MOCVD precursor of CuCr2O4 catalysts upon ceramic preforms for N2O decomposition

Metal-acteylacetonates are important sublimable metal-organic precursors for metal-oxide thin film formation over solid preforms by MOCVD (Metal Organic Chemical Vapour Deposition) technique. Mixed-metal-acetylacetonates (MMAA) are suitable starting materials for mixed metal nano-oxidic thin film formation through such facile routes. Layered Double Hydroxides (LDH) of suitable metal ion combination can perform as appropriate starting base for neutralisation by enol form of 2,4-pentanedione or acteylacetonate tautomer ligands to obtain such MMAA. In this paper synthesis of composite crystals of Cu(II)/Cr(III) acetylacetonates (CCAA) is reported by the reaction of Cu–Cr-LDH with acetylacetone. The products were characterized by various different techniques. The surface area and pore volume analysis of the crystals showed the formation of nanopores in the compound. TEM analysis confirmed that the inner core of the nanoporous crystals of Cu(acac)₂ was covered by coating of poorly crystallised Cr(acac)₃ and they together form the composite crystals, and they together form the composite crystals. Due to eutectic mixture formation the melting point of CCAA lies in between the melting points of individual components Cu(acac)₂ and Cr(acac)₃ and shows sublimability, a property important for the formation of MOCVD films. The composite was used for CuCr₂O₄ spinel mixed oxide films formation over solid ceramic honeycomb monolithic substrates. Application prospects of the route in the field of catalysis is high as it can directly combine the benefits of mixed metal oxide catalysis and structured supports without the involvement of a third component. In this work the performance of such a catalytic device has been tested for low temperature decomposition of high Global Warming Potential (GWP) gas N₂O to N₂ and O₂.     

Organophosphine/phosphite‐stabilized silver(I) complexes bearing N‐acetylbenzamide ligand: synthesis,characterization and potential application in metal organic chemical vapor deposition

New N‐silver(I) acetylbenzamide complexes of type L_n?AgNC₉H₈O₂ (L = PPh₃; n = 1, 2a; n = 2, 2b; n = 3, 2c; L = P(OEt)₃; n = 1, 2d; n = 2, 2e; n = 3, 2f) were prepared. These complexes were obtained in high yields and characterized by elemental analysis, ¹H NMR, ¹³C{H} NMR, ³¹P{H} NMR and IR spectroscopy, respectively. The molecular structure of 2b has been determined by X‐ray single‐crystal analysis in which the silver atom is in a distorted tetrahedral geometry and crystallizes as cis–trans. New N‐silver(I) acetylbenzamide complexes have a four‐membered ring, which could influence their chemical and physical properties and modulate volatility. Metal organic chemical vapor deposition experiments were carried out successfully at 400°C and 450°C using 2e as precursor for the deposition of silver films, respectively. The high‐purity silver film obtained at 400°C is dense and homogeneous. Copyright © 2012 John Wiley & Sons, Ltd.     

Low-temperature growth of high-Tc superconducting films by plasma-enhanced metal-organic chemical vapor deposition

Plasma-enhanced MOCVD in which metal-organic compounds are sublimated directly into the growth chamber is studied for the first time as a new low-temperature process for growing superconducting YBa₂Cu₃O-_-x thin films. Y(THD)₃, Ba(THD)₂, Cu(THD)₂ and oxygen are used as metal sources and oxydizing agent. Emission spectroscopy reveals that activated metal-organic compounds and activated oxygen species are present during film growth. Superconducting YBa₂Cu₃O_7-x films whose zero-resistivity temperature are 50 K and 82 K are grown at 550°C and 600°C.     

MOCVD法制备Cu掺杂ZnO薄膜

通过金属有机物化学气相沉积(MOCVD)设备,在c-Al2 03衬底上生长本征和Cu掺杂ZnO( ZnO∶ Cu)薄膜.X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO∶ Cu样品都呈现出较好的c轴择优取向生长.X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中.利用光致发光(PL)测试对本征ZnO和ZnO∶ C...     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

Seed-assisted growth of epitaxial ZnO nanorod arrays with self-organized periodicity and directional alignment

In this article we report the seed-assisted growth of epitaxial ZnO nanorod (NR) arrays on (0 0 0 1) plane sapphire substrates at low temperatures in aqueous solutions. The self-organized periodic ZnO NR rows with a fairly constant separation were directly grown on bare sapphire surfaces, without the need for any complicated lithography or use of pre-patterned catalysts. The spatial ordering of the ZnO NRs was significantly influenced by the seed growth conditions and by the presence of a self-organized step structure on the annealed sapphire surface. In addition, the effect of the conditions employed to prepare the seeds, including growth parameters and post-growth annealing treatment, on the epitaxial relationship between the ZnO NRs and the sapphire substrate was systematically investigated by X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations. Post-growth annealing of the ZnO seeds changed the morphologies and crystallographic alignment of the generated ZnO nanostructures significantly, as a result of the formation of epitaxial spinel ZnAl₂O₄ interlayers, facilitated by zinc cation diffusion and solid state reactions at high temperature.     

Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

GaN thin films grown by MOCVD on (0 0 0 1) Al₂O₃ substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.     

Uniformity analysis of temperature distribution in an industrial MOCVD reactor

Three‐dimensional models, coupling fluid flow and heat transfer, have been adopted to analyze influences of the process parameters on the temperature uniformity in an industrial MOCVD reactor. Important factors, such as the inlet gas flow, the susceptor rotation, the heater power, the distance between the heat shield and the susceptor (d₁), as well as the distance between the heater and the susceptor (d₂), have been investigated carefully. The system heating condition is characterized by temperature uniformity denoted as the standard deviation of temperature, and by thermal efficiency expressed as a combination parameter of the dissipated energy. The results reveal that decrease of the gas flow and the rotation rate, as well as increase of the distance d₁, could monotonically enhance the temperature uniformity. The results also show that decrease of the above three parameters could improve the thermal efficiency. Furthermore, increase of the distance d₂ enhances the temperature uniformity, and reduces the thermal efficiency slightly. The influences of the parameters on the uniformity vary at the different locations of the susceptor as divided into Zone A, Zone B and Zone C. The conclusions help the growth engineer optimize the system design and process conditions of the reactor.     

The Reaction Of Metal Trialkyls With Benzo[H]Quinolin-10-ol

IntroductionThechemistryoforganoaluminum,organogalliumandorganoindiumcomplexeshasattractedmuchat'tentionduenotonlytotheirinterestingstructuralandchemicalpropertiesbutalsotheirapplicationinsemiconductormaterialsl-5.InthecourseofourstudiesonexploringvolatileMOCVDprecursorsthathavethepropertiesoflowertoxicityandhigherstability,wehaverecentlyreportedonthesynthesisandcharacterizationofintermolecularadducts'-',novelbondingmodecomplexes",',andthecomplexesinwhichN/Omixed-donorcrownethersasligands'l'…