Phase analysis of TaN/Ta barrier layers in sub-micrometer trench structures for Cu interconnects |
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| Authors: | M Traving I Zienert G Schindler M Engelhardt |
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| Institution: | a Infineon Technologies, Corporate Research, Otto-Hahn-Ring 6, D-81739 Munich, Germany
b AMD Saxony LLC & Co. KG, Materials Analysis Department, Dresden/Germany, Wilschdorfer Landstrasse 101, D-01109 Dresden, Germany |
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| Abstract: | The resistance behavior of TaN/Ta diffusion barrier bilayers has been investigated. The dependence of the Ta-phase on the TaN layer thickness was examined by means of X-ray micro-diffraction and resistivity measurements. Furthermore, the influence of the geometry of a damascene trench structure on the Ta-phase of the deposited TaN/Ta barrier bilayers has been studied and compared to the results obtained with blanket wafers. The influence of the Ta-phase on the via resistance of Cu interconnects is discussed. |
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| Keywords: | 61 10 Nz 81 05 Bx 81 15 Cd |
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