Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy |
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Authors: | Y-M Yu YD Choi C-S Kim |
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Institution: | a Department of Optical and Electronic Physics, Mokwon University, Daejeon 302-729, Republic of Korea b Advanced Industrial Technology Group, Korea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea |
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Abstract: | Epitaxial growth characteristics of α-MnS on GaAs(1 0 0) substrates have been investigated by X-ray diffraction and double crystal rocking curve measurements. Growth of stoichiometric α-MnS films has been performed by hot-wall epitaxy using Mn and ZnS as a source of sulfur. The films on GaAs(1 0 0) at low substrate temperature exhibit multiphase crystal structures of zincblende and rocksalt, and the main structure is changed to rocksalt with increasing substrate temperature. Photoluminescence spectrum of the α-MnS epilayer at 5 K exhibits broad emission bands, which are attributed to Mn2+ ions. The band gap energy of the α-MnS epilayer at room temperature was also estimated to be about 3.3 eV by reflection. |
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Keywords: | 61 10 -i 75 50 Pp 73 61 Ga |
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