Microcrystalline silicon‐carbon alloys as anti‐reflection window layers in high efficiency thin film silicon solar cells |
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Authors: | Tao Chen Yuelong Huang Deren Yang Reinhard Carius Friedhelm Finger |
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Institution: | 1. IEF‐5: Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany;2. State Key Lab of Silicon Materials, Zhejiang University, 310027 Hangzhou, P.R. China |
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Abstract: | Microcrystalline silicon‐carbide (μc‐SiC:H) films were prepared using hot wire chemical vapor deposition at low substrate temperature. The μc‐SiC:H films were employed as window layers in microcrystalline silicon (μc‐Si:H) solar cells. The short‐circuit current density (JSC) in these n‐side illuminated n–i–p cells increases with increasing the deposition time tW of the μc‐SiC:H window layer from 5 min to 60 min. The enhanced JSC is attributed to both the high transparency and an anti‐reflection effect of the μc‐SiC:H window layer. Using these favourable optical properties of the μc‐SiC:H window layer in μc‐Si:H solar cells, a JSC value of 23.8 mA/cm2 and cell efficiencies above 8.0% were achieved with an absorber layer thickness of 1 μm and a Ag back reflector. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | 42 79 Wc 81 05 Hd 81 15 Gh 84 60 Bk 84 60 Jt |
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