基于XPS对硫铁矿去除SeO2-3的机理研究

硒是动植物及人体生长必需的十五种微量元素之一，具有清除体内自由基、抗氧化、增强免疫力等功能，但其安全剂量的范围却很窄。利用扫描电子显微镜（SEM）和X射线衍射仪（XRD）对湿法球磨制备的硫铁矿形貌进行了表征。SEM观测发现加乙醇助磨后的硫铁矿为粒径大小较均匀的球形颗粒团聚体，粒径范围在17～200 nm之间，平均粒径138 nm。XRD衍射图谱中的特征峰与FeS₂衍射图谱中各峰位置基本一致，因此判定硫铁矿中主要化学组分为FeS₂，且图谱中基本没有杂峰，表明制备过程中并未混入杂质，样品纯度较高。实验结果表明，该法制备的硫铁矿具有颗粒粒径小、比表面积大、反应活性高等优点。研究中利用X射线光电子能谱仪（XPS）对硫铁矿去除水体中SeO2-₃的机理进行了研究。研究结果表明, （1）在较为广泛的实验pH范围（pH 2.2～11.5），硫铁矿均能有效去除水体中SeO2-₃，去除效率（除pH值7.8以外）均达到90%以上；（2）硫铁矿与SeO2-₃发生反应后，其主要组成元素的XPS特征峰结合能有所减小，表明硫铁矿表面发生了一定化学变化；（3）酸碱环境下硫铁矿去除SeO2-₃的机理不完全相同，酸性环境下，硫铁矿对SeO2-₃的去除是单纯的氧化还原过程，即硫铁矿中被酸活化的S2-₂将SeO2-₃还原为单质Se(0)，并且酸性越强，SeO2-₃去除效果越好；碱性环境下，SeO2-₃的去除过程中氧化还原与络合反应并存，硫铁矿表面有络合态Fe(OH)SeO₃和单质Se(0)两种存在形态，且碱性越强，络合态Fe(OH)SeO₃含量越高。以上研究结果为硫铁矿去除固定水体和土壤中以SeO2-₃为代表的可变价金属阴离子提供重要理论依据和应用基础。     

向您推荐《液晶与显示》——中文核心期刊

《液晶与显示》是中国最早创办的液晶学科专业期刊,也是中国惟一的液晶学科和显示技术领域中综合性专业学术期刊。它由中国科学院长春光学精密机械与物理研究所、中国光学光电子行业协会液晶专业分会和中国物理学会液晶分会主办,科学出版社出版。《液晶与显示》以研究报告、研究快报、综合评述和产品信息等栏目集中报道国内外液晶学科和显示技术领域中最新理论研究、科研成果和创新技术,及时反映国内外本学科领域及产业信息动态,是宣传、展示我国该学科领域和产业科技创新实力与硕果,进行国际交流的平台。本刊是英国《科学文摘》     

邻二氯苯激发态动力学

The dynamics of the first excited singlet electronic state (S₁) of o-dichlorobenzene was investigated in real time by the femtosecond pump-probe method combined with time-of-flight mass spectroscopy and the photoelectron velocity mapping technique. The lifetime of the S₁ vibrational ground state was determined experimentally to be (651 ± 10) ps, corresponding to the intersystem crossing process from the S₁ state to the triplet state. Two decay channels were found in the S₁ vibrationally excited mode 9a₂18a₂. The fast process (lifetime constant (458 ± 12) fs) is because of the internal conversion from the S₁ vibrationally excited mode to the highly vibrationally excited ground state (S₀). The slow process (lifetime constant (90 ± 10) ps) is attributed to the intersystem crossing process from the S₁ state to the triplet state (T₁). Photoelectrons with long lifetime characteristics in the spectrum might be connected with the intersystem crossing process. Enhanced spinorbital coupling in the S₁ highly vibrationally excited state accelerates the intersystem crossing process.     

Ni在ZrO2(111)薄膜表面的生长、电子结构及热稳定性

The growth mode, electronic structure, and thermal stability of Ni nanoparticles on thin ZrO₂(111) film surfaces were investigated using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction. Stoichiometric ZrO₂(111) thin films with thickness of 3 nm were epitaxially grown on a Pt(111) single-crystal surface. The results indicate that the growth of Ni vapor deposited on thin ZrO₂(111) films follows two-dimensional growth up to 0.5 ML (monolayer), followed by threedimensional growth (i.e., the Stranski-Krastanov growth mode). The Ni 2p_3/2 binding energy (BE) increases with decreasing Ni coverage. We used the Auger parameter method to differentiate the contributions to this BE shift from the initial-state and final-state effects. The main contribution to the Ni 2p core level BE shift is made by the final-state effect. However, at low Ni coverages, the initial-state effect also contributes. This suggests that at the initial stage of Ni growth on the ZrO₂(111) surface, Ni and ZrO₂ interact strongly, leading to charge transfer from Ni to the ZrO₂ substrate, with the appearance of partially positively charged Ni_δ+. Thermal stability studies of Ni/ZrO₂(111) model catalysts with two different coverages (0.05 and 0.5 ML) indicate further oxidation of Ni to Ni₂₊ and concurrent diffusion of Ni into the ZrO₂ substrate at elevated temperatures. These findings provide an atomic-level fundamental understanding of the interactions between Ni with ZrO₂, which is essential for identifying the structures of real ZrO₂-supported Ni catalysts.     

稀薄空气、等离子体环境外系统电磁脉冲的数值模拟

为研究大气环境对系统电磁脉冲(SGEMP)的影响,针对海拔50～100 km的X射线能量沉积区,分别应用3维PIC程序及3维PIC-MCC程序各自开展预电离等离子体和稀薄空气条件下外SGEMP的建模与模拟研究,针对3种不同的X射线注量(4×10^-3 J/cm²、 4×10^-2 J/cm²、 0.4 J/cm²),分别取对应两种不同海拔高度(70 km和80～90 km)的本底等离子体及海拔56 km的稀薄空气条件进行模拟计算,并和真空中的计算结果进行对比,得出预电离等离子体及稀薄空气对外SGEMP的影响规律：当X射线注量较低时,等离子体使得磁场增大,电场减小,而稀薄空气对外SGEMP效应影响不明显;随着X射线注量增大,空间电荷非线性效应越来越明显,等离子体及稀薄空气都使得电场、磁场同时增大,且稀薄空气的增大效应更显著。     

基于压电效应的光电子集成技术研究进展（特邀）

压电效应是一种实现电能与机械能之间相互转换的重要物理现象。随着集成光电子技术和压电薄膜材料制备技术的日益成熟,压电效应在光电子集成芯片领域引起广泛的研究。在压电效应的作用下,外部电场可以操控薄膜材料的形变,从而改变折射率,实现光电调谐和声光调制。本文首先介绍常见压电薄膜材料及其研究进展,随后回顾和探讨基于压电效应的光电子集成器件的研究进展。最后,对压电调谐器件和声光调制器的应用进行介绍和展望,分析其大规模应用面临的挑战和问题。     

CL-20电子束的X射线光电子能谱-气体质谱原位同步分析技术研究

X射线光电子能谱仪是材料表面元素定性和半定量分析,尤其是元素化学态分析的重要手段之一. X射线光电子能谱仪的分析腔连接质谱仪进行分析,可有效获得样品表面元素变化及气体产物,实现原位同步分析. 基于炸药CL-20在光作用下存在着明显的分解现象,采用X射线光电子能谱-气体质谱同步分析方法(XPS-MS)获得CL-20在电子束作用下的表面元素及气体产物的变化. 试验结果表明,随着辐照时间增加,N、O元素峰峰强迅速下降,同时质谱仪可以有效获得气态产物峰,证实XPS-MS同步分析技术能够有效地实现对固态光降解反应的原位同步追踪.     

制样方法对固体粉末X射线光电子能谱测试结果的影响

为了得到准确且分辨率高的X射线光电子能谱(XPS)数据,采用不同制样方法对不同类型的导电、不导电和混合粉末的测试结果进行了研究. 从图谱半峰宽、是否有荷电、真实性、制样效率和数据处理等方面阐述不同制样方法对测试结果的影响. 试验结果表明,对于导电和不导电粉末,粘取制样略优于铟片制样,其中使用碳导电胶带制样效果更好. 对于混合样品,Scotch双面胶带粘样后的测试结果优于其他3种制样方式. 此外,铟片制样可作为数据处理时荷电校正的参考方法.     

X射线光电子能谱仪的开放使用与管理

X射线光电子能谱仪(XPS)是材料表面元素定性和半定量分析的重要手段之一,是表面分析科研工作的必备仪器.为提高测试效率,实施了大型仪器设备开放共享优化,总结了在推动XPS开放过程中管理的经验和体会.     

飞秒脉冲作用下氯丙烯的多光子解离和电离动力学

The dissociation and photoionization dynamics of C₃H₅Cl were studied at 200, 400, and 800 nm with femtosecond laser pulses. The time-of-flight mass spectra, laser power index and photoelectron images were recorded. At short wavelength (200 nm), ionization of the parent molecule was found to be the dominant channel, while other ions were generated by the dissociation of C₃H₅Cl⁺. With the shift to long wavelength (e.g., 800 nm), fragment ions became dominant, and were generated through the multiphoton ionization of neutral fragments after the photodissociation of C₃H₅Cl. These results imply that photodissociation plays a significant role at long wavelength, because neutral fragments are supposed to be generated from the intermediate states reached by 800 nm photons. At 400 nm, the dissociation on the intermediate states is also critical, but is not as high as that at 800 nm. Taken together, our results demonstrate that the dissociation/ionization behaviors of allyl chloride are wavelength-dependent, and reveal the complex dynamics of allyl chloride at 200, 400 and 800 nm.