Strong blue emission from ZnSe nanowires grown at low temperature |
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| Authors: | Valentina Zannier Faustino Martelli Vincenzo Grillo Jasper R Plaisier Andrea Lausi Silvia Rubini |
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| Institution: | 1. IOM‐CNR Laboratorio TASC, S.S. 14, Km. 163.5, 34149 Trieste, Italy;2. Department of Physics, University of Trieste, Via Valerio 2, 34127 Trieste, Italy;3. IMM‐CNR, via del Fosso del Cavaliere 100, 00133 Roma, Italy;4. IMEM‐CNR, Parco Area delle Scienze 37/A, 43010 Parma, Italy;5. S3 NANO‐CNR, Via Campi 213/A, 41125 Modena, Italy;6. Sincrotrone Trieste S.C.p.A., Elettra Laboratory, S.S. 14, Km. 163.5, 34149 Trieste, Italy |
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| Abstract: | We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low‐temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue‐emitting nanowires have been obtained. The growth mecha‐ nism is discussed with the help of in‐situ and ex‐situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO‐coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | nanowires photoluminescence molecular beam epitaxy vapour− solid− solid growth ZnSe |
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