Fabrication of ZnSe/C Hollow Polyhedrons for Lithium Storage

ZnSe has got extensive attention for high-performance LIBs anode due to its remarkable theoretical capacity and environmental friendliness. Nevertheless, the large volume variation for the ZnSe in the discharge/charge processes brings about rapid capacity fading and poor rate performance. Herein, ZnSe/C hollow polyhedrons are successfully synthesized by selenization of zeolitic imidazolate framework-8 (ZIF-8) with resorcinol-formaldehyde (RF) coating. The protection of C layer derived from RF coating layer and Ostwald ripening during the process of selenization play important roles in promoting formation of ZnSe/C hollow polyhedrons. The ZnSe/C hollow polyhedrons exhibit good rate performance and long-term cycle stability (345 mAh g⁻¹ up to 1000 cycles at 1 A g⁻¹) for lithium ion batteries (LIBs) anode. The improved electrochemical performance is benefit from the unique ZnSe/C hollow structure, in which the hollow structure can effectively avoid terrible volume expansion, and the thin ZnSe/C shell can not only provide adequate diffusion paths of lithium ions and but also enhance the electronic conductivity.     

A Novel One‐Pot Synthesis of UV‐Blue ZnSe Nanocrystals in Aqueous Solution

Described herein is a novel one‐pot aqueous synthesis of ZnSe nanocrystals has featuring the utilization of Na₂SeO₃ and Zn(AC)₂×2H₂O as Se and Zn source, glutathione (GSH) as stabilizing agent and reducing agent. By this approach, the UV‐blue ZnSe QDs with quantum yield (QYs) up to 19% have been synthesized with a molar ratio of Se/Zn/GSH at 1:4:8.5 under aqueous conditions at 110 °C. XRD and TEM show the ZnSe QDs are zinc cubic structure particles with an average diameter of 3–5 nm.     

Characterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar atmosphere on physical properties

The Zinc Selenide (ZnSe) thin films have been deposited on SnO₂/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (E_g) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, dρ/dT > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature.     

Mn:ZnSe/ZnS核-壳结构纳米晶的无膦法制备和光学性质

以溶于十八烯的Se作为Se前驱体,在无膦条件下制备得到了具有较高量子产率的Mn:ZnSe纳米晶.为了进一步提高纳米晶的稳定性和发光强度,运用外延生长的方法进行ZnS壳层包覆并得到了具有核-壳结构的Mn:ZnSe/ZnS纳米晶.X射线衍射、透射电子显微镜及吸收和荧光光谱测试结果表明,该方法合成的Mn:ZnSe纳米晶以及核-壳结构Mn:ZnSe/ZnS纳米晶均为闪锌矿结构,具有良好的单分散性,包覆ZnS外壳层后量子产率可达到60%以上.此外,对ZnS壳层厚度和Mn2+的掺杂量对Mn:ZnSe/ZnS纳米晶发光强度的影响及发光机制也进行了初步讨论.     

Development and construction of rotating polarizer analyzer ellipsometer

A detailed mathematical derivation and an experimental characterization of one to two ratio rotating polarizer analyzer ellipsometer (RPAE) are presented. The alignment, calibration, and testing of reference samples are also discussed. The optical properties of some known materials obtained by the proposed ellipsometer will be shown and compared to accepted values. Moreover, the constructed ellipsometer will be tested using two ellipsometry standards with different thicknesses.     

Monocrystalline ZnSe as an ionising radiation detector operated over a wide temperature range

This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a better option for effective detection of ionising radiation at high temperatures. The results of an experimental investigation into the luminescent, electrical and spectrometric properties of the wide-gap semiconductor ZnSe are shown as an example. Undoped monocrystalline ZnSe has an extremely low leakage current over a wide range of temperatures up to 167 °C and can be used as a radiometric X-ray detector in pulse-counting mode over a wide temperature range up to at least 130 °C.     

The photoacoustic spectroscopic investigations of the surface preparation of ZnSe crystals

This paper presents results of the photoacoustic (PA) spectral studies of a series of ZnSe crystals with differently prepared surfaces. All samples exhibited the surface absorption connected with defects states located on their surfaces. The quality of the surface preparation is expressed by the surface absorption coefficient spectra of the samples times the thickness of a damaged layer. In this paper both theoretical and experimental photoacoustic amplitude and phase spectra as also the corresponding computed surface and volume optical absorption coefficient spectra of the samples with differently prepared surfaces are presented and discussed. This is the first attempt of the quantitative evaluation of the surface quality of the samples from the photoacoustic experimental spectra.     

化学气相沉积法制备ZnSe微球

采用化学气相沉积方法,以MiSe2为前驱体,制备出尺寸均匀、分散度好的ZnSe微球.通过XRD、EDS和FESEM对产物的结构、成分和形貌进行了测试与表征.结果表明:所得ZnSe微球为立方闪锌矿结构,直径在800～1000 nm之间,具有近于理想的化学计量比.变温光致发光谱研究表明,ZnSe微球在550～640 nm处存在与Zn空位及杂质能级相关的发光峰.     

胶体水相法制备高量子产率及高稳定性的水溶性ZnSe量子点

采用简便的胶体水相法制备了高荧光强度且稳定性良好的ZnSe量子点(ZnSe QDs),克服了以往水相合成法稳定性差、量子产率低等缺陷。优化后的最佳合成条件为：以还原型L-谷胱甘肽作为稳定剂,L-谷胱甘肽∶Se2-∶Zn2+摩尔比为5∶1∶5,介质pH 10.5,反应温度在90～100 ℃之间。且合成后不需要采取任何光照后处理,ZnSe QDs的量子产率(QYs) 即可高达50.1%,放置3个月后荧光强度基本不变,水溶性优良。用紫外-可见分光光度法(UV-Vis)、荧光分光光度法(FL)、透射电子显微镜(TEM)等分析检测手段,对得到的ZnSe QDs的性能进行表征。合成的量子点在300 nm激发下发蓝紫色荧光(370 nm),其优良的光化学特性将有利于其在光热器件的制造及化学生物领域的应用。     

CdSe/ZnSe量子点在油水两相体系下的聚合物包覆相转移及其光谱表征

采用油水两相溶液体系,借助于双亲聚合物包覆实现了CdSe/ZnSe核壳结构量子点自油相到水相的相转移。油水两相中的聚合物包覆与已经报道的均相溶液中聚合物包覆量子点的方法不同,包覆过程在油水两相界面处完成,有效地减少了聚合物缠绕引起的量子点团聚,实现了聚合物对量子点的无团聚单分散包覆。透射电镜和激光粒度分析仪对聚合物包覆量子点的表征结果表明获得的水溶性量子点具有良好的分散性,均一的水力尺寸。吸收和发射光谱表明聚合物包覆过程对量子点的发射峰位和峰型没有引起明显的改变,维持了较高的量子产率。通过荧光微区成像技术成功实现了对人IgG蛋白的特异性检测,证实这种方法获得的聚合物包覆量子点具有较好的与生物分子偶联的功能化基团,适合于生物学标记应用。