| 852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性 |
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| 引用本文： | 徐华伟,宁永强,曾玉刚,张星,秦莉,刘云,王立军.852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性[J].发光学报,2012,33(6):640-646. |
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| 作者姓名： | 徐华伟 宁永强 曾玉刚 张星 秦莉 刘云 王立军 |
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| 作者单位： | 1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033;
2. 中国科学院 研究生院, 北京 100039 |
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| 基金项目： | 国家自然科学基金，国家自然科学基金重点项目 |
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| 摘 要： | 为了提高852 nm半导体激光器的温度稳定性,理论计算了InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的增益,模拟对比并研究了不同量子阱的增益峰值和峰值波长随温度的漂移。结果显示,采用In0.15Ga0.74-Al0.11As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的温度稳定性。使用金属有机化学气相沉积(MOCVD)外延生长了压应变In0.15Ga0.74Al0.11As单量子阱852 nm半导体激光器,实验测得波长随温度漂移的数值为0.256 nm/K,实验测试结果验证了理论计算结果。
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| 关 键 词： | 激光器 AlGaInAs 量子阱 数值模拟 |
| 收稿时间： | 2012/3/7 |
Temperature Stability of InGaAlAs, InGaAsP,InGaAs and GaAs Quantum-wells for 852 nm Laser Diode |
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| XU Hua-wei
,
NING Yong-qiang
,
ZENG Yu-gang
,
ZHANG Xing
,
QIN Li
,
LIU Yun
,
WANG Li-jun.Temperature Stability of InGaAlAs, InGaAsP,InGaAs and GaAs Quantum-wells for 852 nm Laser Diode[J].Chinese Journal of Luminescence,2012,33(6):640-646. |
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| Authors: | XU Hua-wei NING Yong-qiang ZENG Yu-gang ZHANG Xing QIN Li LIU Yun WANG Li-jun |
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| Institution: | 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | In order to enhance the temperature stability of 852 nm laser diode,the gain of InGaAlAs,InGaAsP,InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory,and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed.The results indicate that In0.15Ga0.74Al0.11As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously.Compressive-strained In0.15Ga0.74Al0.11As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition(MOCVD).The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K,the experimental results are in good agreement with theoretical calculation results. |
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| Keywords: | lasers AlGaInAs quantum-well numerical simulation |
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