Gain saturation in quantum-well heterostructures

The effect of radiation gain saturation in quantum-well heretostructures was investigated in the system GaAs—AlGaAs with regard to the spectral line broadening and the type of radiation polarization. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 797–800, November–December, 1997.     

Organic quantum well and superlattice characteristics in quasi-one-dimensional multiblock copolymers

A tight-binding calculation was presented to describe multiblock copolymers, such as [...-(PA)x-(PPP)y-...] composed of PA (polyacetylene) and PPP (poly(p-phenylene). It is found that a copolymer has a quantum well and superlattice characteristics, and evident is the effect of the composite lengths, the interfacial couplings and the electron-phonon interactions on the electronic properties of a copolymer. The quantum tunneling, the Franz-Keldysh effect and the quantum confinement can be generated under an applied electric field. These results were compared to those of traditional inorganic quantum well and superlattice systems.     

The modified k·p method to investigate polarization effects in nitride quantum-well devices

The modified k·p method (which includes both stress and polarization effects) has been used to investigate recombination phenomena in nitride quantum-well (QW) devices. Within their volumes, both spontaneous and piezoelectric polarization have been found to have an essential influence on carriers behaviour. In particular, as a result of the quantum-confined Stark effect, energy of radiation emitted within the AlGaN/GaN/AlGaN QW has been found to decrease rapidly with an increase in the AlN mole fraction of the barrier material, which means—with an increase in mechanical stresses at the GaN/AlGaN heterojunctions. It should also be stressed that screening of polarization effects induced by free carriers at least partly reduced the above stress influence. So both effects, polarization and its screening, are equally important in exact modelling of an operation of nitride QW devices.     

一维对称光量子阱结构多通道滤波特性研究

利用传输矩阵法研究了一维对称光量子阱结构的多通道滤波特性,发现该结构的多透射峰具有分布对称、近似等间距和高透射率等特点,且峰值位置能利用等效理论近似解析求出.透射峰的数目可通过阱区结构参量确定和进行调整,结构的光子禁带范围可通过材料参量的选择获得极大的展宽.该结构只采用两种材料,结构简单,易于制作,具有较大的材料选择性.     

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.     

Stark Effect Dependence on Hydrogenic Impurities in GaAs ParabolicQuantum-Well Wires

The ground-state and lowest excited-state binding energies of ahydrogenic impurity in GaAs parabolic quantum-well wires (QWWs)subjected to external electric and magnetic fields are investigated using the finite-difference method within the quasi-one-dimensional effective potential model. We define an effective radius ρ_eff of a cylindrical QWW, which can describe the strength of the lateral confinement. For the ground state, theposition of the largest probability density of electron in x-y plane is located at a point, while for the lowest excited state, is located on a circularity whose radius is ρ_eff. The point and circularity are pushed along the left half of the center axis of the quantum-well wire by the electric field directed along theright half. When an impurity is located at the point or within the circularity, the ground-state or lowest excited-state binding energies are the largest; when the impurity is apart from the point or circularity, the ground-state or lowest excited-state binding energies start to decrease.     

Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

Taking into account oxidation temperature, N₂ carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al_0.98Ga_0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.     

Influence of Radiation Polarization on the Nonlinear Response of a Semiconductor Laser with Pump Current Modulation

The influence of various lasing-radiation polarization states and types of optical dipole transitions on the nonlinear amplitude-detuning characteristics of quantum-well semiconductor lasers with pump current modulation has been theoretically investigated. It has been established that the narrowest spectral interval, where the response is nonzero, is realized in the case of TM-mode radiation and transitions to the heavy-hole states as well as in the case of TE-mode radiation and transitions to the light-hole states.     

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the above-mentioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold.It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.PACS numbers: 05.45.Pq, 42.55.Px, 42.65.Sf     

Semiconductor Lasing Wavelength in Heating Charge Carriers by Short Current Pulses

It is shown experimentally that the semiconductor lasing wavelength is shifted into the longwave region when the laser is pumped by short electric pulses. In order to explain the experimental results obtained, calculations must involve the dependence of the energy-gap width on the density of carriers and the heating of the latter. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 479–485, July–August, 2005.