Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm-4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.     

Optomechanical-organized multipulse dynamics in ultrafast fiber laser

A novel organized multipulse pattern and its birth dynamics under strong optomechanical effect in microfiber-assisted ultrafast fiber laser are investigated in this work. The background pulses are observed to obviously exhibit selectively amplifying self-organized process of evolving into quasi-stable equidistant clusters. The radio frequency spectrum of the multipulse pattern displays a harmonic mode-locking-like behavior with a repetition rate of 2.0138 GHz, corresponding to the frequency of torsional-radial (TR_2m) acoustic mode in microfiber. The results show the evidence of optomechanical effect in dominating the birth dynamics and pattern of multipulse.     

Monodisperse Six-Armed Starbursts based on Truxene-Cored Multibranched Oligofluorenes: Design,Synthesis, and Stabilized Lasing Characteristics

A series of monodisperse six-armed conjugated starbursts ( Tr1F , Tr2F , and Tr3F ) containing a truxene core and multibranched oligofluorene bridges capped with diphenylamine (DPA) units has been designed, synthesized, and investigated as robust gain media for organic semiconductor lasers (OSLs). The influence of electron-rich DPA end groups on their optoelectronic characteristics has been discussed at length. DPA cappers effectively raise HOMO levels of the starbursts, thus enhancing the hole injection and transport ability. Solution-processed electroluminescence devices based on the resulting six-armed starbursts exhibited efficient deep-blue electroluminescence with clear reduced turn-on voltages (3.2–3.5 V). Moreover, the resulting six-armed molecules showed stabilized electroluminescence and amplified spontaneous emission with low thresholds (27.4–63.9 nJ pulse⁻¹), high net gain coefficients (80.1–101.3 cm⁻¹), and small optical loss (2.6–4.4 cm⁻¹). Distributed feedback OSLs made from Tr3F exhibited a low lasing threshold of 0.31 kW cm⁻² (at 465 nm). The results suggest that the construction of truxene-centered six-armed conjugated starbursts with the incorporation of DPA units can effectively enhance EL properties by precisely regulating the HOMO energy levels, and further optimizing their optical gain properties.     

Polarization control of an X‐ray free‐electron laser with a diamond phase retarder

A diamond phase retarder was applied to control the polarization states of a hard X‐ray free‐electron laser (XFEL) in the photon energy range 5–20 keV. The horizontal polarization of the XFEL beam generated from the planar undulators of the SPring‐8 Angstrom Compact Free‐Electron Laser (SACLA) was converted into vertical or circular polarization of either helicity by adjusting the angular offset of the diamond crystal from the exact Bragg condition. Using a 1.5 mm‐thick crystal, a high degree of circular polarization, 97%, was obtained for 11.56 keV monochromatic X‐rays, whereas the degree of vertical polarization was 67%, both of which agreed with the estimations including the energy bandwidth of the Si 111 beamline monochromator.     

Out of the blue: semiconductor laser pumped visible rare‐earth doped lasers

The rise of semiconductor‐based pump sources such as In_xGa_1‐xN‐laser diodes or frequency‐doubled optically pumped semiconductor lasers with emission wavelengths in the blue encourages a revisitation of the rare‐earth ions Pr³⁺, Sm³⁺, Tb³⁺, Dy³⁺, Ho³⁺ and Er³⁺ with respect to their properties as active ions in crystalline solid‐state laser materials with direct emission in the visible spectral range. Nowadays, some of these blue‐pumped visible lasers compete with Nd³⁺‐lasers in terms of efficiency and direct lasing at various colors from the cyan‐blue to the deep red can be addressed in very simple and compact laser setups. This paper highlights the spectroscopic properties of suitable rare‐earth ions for visible lasing and reviews the latest progress in the field of blue‐pumped visible rare‐earth doped solid‐state lasers.

     

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.     

Black phosphorus saturable absorber for ultrafast mode‐locked pulse laser via evanescent field interaction

Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode‐locking. A direct interaction scheme for mode‐locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2‐dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode‐locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively.     

互注入垂直腔表面发射激光器的多次偏振转换特性研究

基于垂直腔表面发射激光器(VCSELs)的自旋反转模型, 研究了互注入VCSELs系统中参数连续变化所引起的多次偏振转换(PS)特性. 研究结果表明: 连续改变互注入强度ξ、两个互注入VCSELs中一个激光器的激射频率以及同时连续改变两个激光器的激射频率, 均可产生多次的PS. 详细分析了上述三种参数连续变化所引起的多次PS的特性, 并讨论了耦合延时时间对多次PS特性的影响.     

基于半导体环形激光器的高速双向双信道混沌保密通信

提出了一种利用半导体环形激光器(SRLs)的新型高速双向、双信道混沌保密通信系统. 在该系统中, 首先利用交叉双光反馈对驱动激光器的顺时针模式和逆时针模式的混沌延时特征进行抑制. 然后将此混沌信号注入到一对响应激光器对应的顺时针模和逆时针模中, 以实现带宽的增强及混沌同步. 最后基于响应激光器之间的混沌同步, 实现高速率、双向、双信道的混沌保密通信. 通过对驱动激光器在交叉双光反馈作用下的混沌特性、以及响应激光器在不同条件下的同步特性进行了相关理论和仿真研究, 结果表明: 驱动激光器在合适的交叉双光反馈作用下可以产生延时特性被良好隐藏的顺时针模式和逆时针模式混沌信号; 在该混沌信号的注入下, 响应激光器输出的混沌信号带宽可以得到明显增强; 通过设置合适注入强度值和频率失谐值, 响应激光器之间可实现高质量的等时混沌同步. 最后, 对系统的双向、双信道混沌保密通信特性进行了讨论. 当10 Gbit/s信号传输距离为10 km时, 解调信息Q因子值仍可保持在6以上.