Synthesis of chromium silicide with laser pulses |
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Authors: | E D'Anna A V Drigo G Leggieri A Luches G Majni P Mengucci |
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Institution: | (1) Dipartimento di Fisica, Università di Lecce, Lecce, Italy;(2) Dipartimento di Scienze dei Materiali, Università di Lecce, Lecce, Italy;(3) Dipartimento di Scienze dei Materiali e delle Terra, Università di Ancona, Ancona, Italy |
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Abstract: | Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence. |
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Keywords: | 68 55 79 20D 82 50 |
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