化学增感对光电子时间分辨谱的影响

利用微波吸收相敏检测技术，对AgBrI-T颗粒乳剂中光电子时间行为进行了检测，并获得了自由光电子与浅束缚光电子的时间分辨谱。实验结果表明，在加入Na₂S₂O₃相同的条件下S与S+Au增感中心所起的电子陷阱作用不同，S增感中心所起的作用为深电子陷阱，增感中心由于增加了对光电子的深束缚，从而造成自由光电子与浅束缚光电子的衰减加剧;S+Au增感中心所起的作用为浅电子陷阱，增感中心通过暂时束缚光电子有效降低了光电子与光空穴的复合，减缓了自由光电子与浅束缚光电子的衰减，可见加入KAuCl₄后形成的S+Au增感中心陷阱深度要比S增感中心的陷阱深度浅。从光电子时间分辨谱的变化可以看出S与S+Au增感中心在衰减曲线的不同时域中对光电子衰减的作用表现不同。

Effects of Chemical Sensitization on Photoelectron Time-Resolved Spectrum

The time-resolved spectra of free photoelectrons and shallow-trapped electrons in the T-grains AgBrI emulsion were simultaneously detected with microwave abs orption and dielectric spectrum detection technique. The results indicate that t he electron trap effects of sulfur sensitization centers and sulfur-plus-gold sensitization centers are different with equal quantities of Na_2S_2O_3 added . The sulfur sensitization centers acted as a deep electron trap to pick up the electronic decay because of increasing the number of deep trapped electrons, wh ile the sulfur-plus-gold sensitization centers as a shallow electron trap decr ease the electronic decay through effectively controlling the recombination betw een the electrons and the holes. The depth of sulfur-plus-gold sensitization center is shallower than that of sulfur sensitization center after the KAuCl _ 4 is added. The effects of sulfur sensitization center and sulfur-plus-gold se nsitization center on the photoelectron decay are different in different section s of decay curves through the change in electron time-resolved spectra.