High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors |
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Authors: | J Nishii A Ohtomo Y Yamada H Ohno |
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Institution: | a Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan b Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan c Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044, Japan |
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Abstract: | Using composition-spread technique, we have grown metastable Mg1−xCaxO solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (1 1 1) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700 °C, whereas an optimal growth temperature was found at 400 °C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors. |
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Keywords: | 81 05 Dz 81 15 Fg 68 55 Jk 68 55 Nq |
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