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Gd-doping of HfO2 |
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| Authors: | Ihor Ketsman YaB Losovyj A Sokolov Zhenjun Wang JI Brand |
| Institution: | a Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, Lincoln, NE 68588-0111, USA b Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA 70806, USA c Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071, USA d College of Engineering and Technology, and the Nebraska Center for Materials and Nanoscience, N209 Walter Scott Engineering Center, 17th & Vine Streets, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA |
| Abstract: | An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level. In addition, there is an increase in the reverse bias current with neutron irradiation. |
| Keywords: | 79 60 Jv 68 55 Ln 29 40 Wk 81 05 J |
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