| GaInP材料生长及其性质研究 |
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| 引用本文： | 董建荣,刘祥林.GaInP材料生长及其性质研究[J].光子学报,1996,25(1):9-14. |
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| 作者姓名： | 董建荣 刘祥林 |
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| 作者单位： | 中国科学院半导体研究所半导体材料科学实验室 |
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| 摘 要： | 用常压MOCVD在半绝缘GaAs衬底上生长了GaxIn1-xP(x=0.476～0.52)外延层,对外延层进行了X光双晶衍射、Hall和光致发光(PL)测试.77K下电子迁移率达3300cm2/V.s(浓度为1.4×1016cm-3).载流子浓度随生长温度升高,随Ⅴ/Ⅲ比的增大而降低,并提出P空位(Vp)是自由载流子的一个重要来源,17KPL谱中,Ga0.5In0.5P(Tg=650℃,Ⅴ/Ⅲ=70)的峰能为1.828eV,半峰宽为19meV.另外,在1.849eV处还有一较弱的峰,GaInP峰能和其计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关.
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| 关 键 词： | MOCVD GaInP 光致发光 |
| 收稿时间： | 1994-08-29 |
THE PROPERTIES OF GaInP GROWN BY MOCVD |
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| Dong Jianrong, Liu Xianglin, Lu Dacheng, Wang Du, Wang Xiaohui, Wang Zhanguo.THE PROPERTIES OF GaInP GROWN BY MOCVD[J].Acta Photonica Sinica,1996,25(1):9-14. |
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| Authors: | Dong Jianrong Liu Xianglin Lu Dacheng Wang Du Wang Xiaohui Wang Zhanguo |
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| Institution: | Semiconductor Materials Science Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | GaxIn1-xP(x=0.476～0.52) epitaxial layers were grown on 5°off (100) GaAs substratesiowards <110> by atmospheric Metalorganic Chemical Vapor Deposition (MOCVD) equipment,They were characterized by doublecrystal X-ray diffraction (DCXD),Hall and photolumine scence measurements.The electron mobility of Ga0.5In0.5P reaches 3300 cm2/V.s (carrier concentration is 1.4×1016cm3) at 77K.The carrier concentration decreases with increasing growth temperature and Ⅴ/Ⅲ ratio.It was suggested that P vacancies act as donors.The 77K PL spectrum of Ga0.5In0.5 Player grownat 650 ℃ and Ⅴ/Ⅲ ratio of 70 was dominated by a peak at 1.828 eV with a line width (FWHM) of 19 meV,and a weak peak 1.849 eV occurred at higher energy side.The difference between PL peakenergy and calculated band gap energy of GaInP is between 84～113 mV.This is probahly related to impurities and ordered structure in GaInP. |
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| Keywords: | MOCVD GaInP Photoluminescence |
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