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| 电流主动导引结构倒装AlGaInP LED | |
| 引用本文： | 李川川,关宝璐,郝聪霞,郭霞.电流主动导引结构倒装AlGaInP LED[J].光学学报,2012,32(7):723004-245. |
| 作者姓名： | 李川川 关宝璐 郝聪霞 郭霞 |
| 作者单位： | 李川川:北京工业大学电子信息与控制工程学院光子器件研究实验室, 北京 100124 关宝璐:北京工业大学电子信息与控制工程学院光子器件研究实验室, 北京 100124 郝聪霞:北京工业大学电子信息与控制工程学院光子器件研究实验室, 北京 100124 郭霞:北京工业大学电子信息与控制工程学院光子器件研究实验室, 北京 100124 |
| 基金项目： | 国家自然科学青年基金（60908012）和北京市教委项目（KM201010005030）资助课题。 |
| 摘 要： | 设计并制备了一种带有电流导引结构的新型倒装AlGaInP LED。实验结果表明,在20mA直流电流注入下,器件的电压为2.19V,输出光功率与普通倒装器件相比提高了17.33%。通过电流导引结构,使得器件注入电流被主动引导到电极以外部分,有效增大了上电极以外部分有源区中用于发光的有效载流子数目的比例,同时减轻了电流密度过大现象,大大提高了器件的出光效率。 |
| 关 键 词： | 光电子学 AlGaInP LED 倒装 电流导引 电流密度分布 |
| 收稿时间： | 2012/1/10 |
Flip-Chip AlGaInP LEDs with Current-Guiding Structure |
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| Li Chuanchuan Guan Baolu Hao Congxia Guo Xia.Flip-Chip AlGaInP LEDs with Current-Guiding Structure[J].Acta Optica Sinica,2012,32(7):723004-245. | |
| Authors: | Li Chuanchuan Guan Baolu Hao Congxia Guo Xia |
| Institution: | Li Chuanchuan Guan Baolu Hao Congxia Guo Xia(Photonic Device Research Laboratory,College of Electronic Information and Control Engineering, Beijing University of Technology,Beijing 100124,China) |
| Abstract: | A new flip-chip AlGaInP LED with current-guiding structure is designed. Experimental results show that the output optical power increases by 17.33% than that of the ordinary flip-chip AlGaInP LED with a voltage of 2.19 V at the injection current of 20 mA. Through the current-guiding structure, the injection current of device is actively guided outside of the electrodes, effectively increasing the effective carrier number for luminescence in the active area outside the electrode, while reducing the current crowding phenomenon. This greatly improves the optical efficiency of the device. |
| Keywords: | optoelectronics AlGaInP LED flip-chip current-guiding current density distribution |
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