Electronic properties of 2H-stacking bilayer MoS2 measured by terahertz time-domain spectroscopy

Bilayer (BL) molybdenum disulfide (MoS₂) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS₂ on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS₂. The optical conductivity of BL MoS₂ is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS₂ can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS₂, BL MoS₂ with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS₂ differ from those observed for ML MoS₂. The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS₂ based twistronic systems for novel applications as optical and optoelectronic materials and devices.     

高效大面积有机白光照明研究及其展望

白光有机发光二极管(OLED)是新一代健康节能照明光源,光效性能已超过荧光灯水平。自从OLED技术问世以来,研究人员陆续开展了关于OLED照明的研究工作。本文介绍了OLED照明的特点,以及国内外OLED照明发展现状,讨论了发展OLED照明技术和装备国产化所亟待解决的重大难题和面临的挑战,重点论述了发展高效大面积OLED照明器件制备技术及推动OLED照明产业化的重要意义。     

Semiconductor Emitters in Entropy Sources for Quantum Random Number Generation

Random number generation (RNG) is needed for a myriad of applications ranging from secure communication encryption to numerical simulations to sports and games. However, generating truly random numbers can be elusive. Pseudorandom bit generation using computer algorithms provides a high random bit generation rate. Nevertheless, the reliance on predefined algorithms makes it deterministic and predictable once initial conditions are known. Relying on physical phenomena (such as measuring electrical noise or even rolling dice) can achieve a less predictable sequence of bits. Furthermore, if the physical phenomena originate from quantum effects, they can be truly random and completely unpredictable due to quantum indeterminacy. Traditionally, physical RNG is significantly slower than pseudorandom techniques. To meet the demand for high-speed RNG with perfect unpredictability, semiconductor light sources are adopted as parts of the sources of randomness, i.e., entropy sources, in quantum RNG (QRNG) systems. The high speed of their noise, the high efficiency, and the small scale of these devices make them ideal for chip-scale QRNG. Here, the applications and recent advances of QRNG are reviewed using semiconductor emitters. Finally, the performance of these emitters is compared and discuss their potential in future technologies.     

Optimizing Optoelectronic Properties of Pyrimidine‐Based TADF Emitters by Changing the Substituent for Organic Light‐Emitting Diodes with External Quantum Efficiency Close to 25 % and Slow Efficiency Roll‐Off

A series of green butterfly‐shaped thermally activated delayed fluorescence (TADF) emitters, namely PXZPM , PXZMePM , and PXZPhPM , are developed by integrating an electron‐donor (D) phenoxazine unit and electron‐acceptor (A) 2‐substituted pyrimidine moiety into one molecule via a phenyl‐bridge π linkage to form a D –π–A–π–D configuration. Changing the substituent at pyrimidine unit in these emitters can finely tune their emissive characteristics, thermal properties, and energy gaps between the singlet and triplet states while maintaining frontier molecular orbital levels, and thereby optimizing their optoelectronic properties. Employing these TADF emitters results in a green fluorescent organic light‐emitting diode (OLED) that exhibits a peak forward‐viewing external quantum efficiency (EQE) close to 25 % and a slow efficiency roll‐off characteristic at high luminance.     

Perylene polyphenylmethylsiloxanes for optoelectronic applications

The incorporation of fluorescent organic dyes in an encapsulating matrix represents a route to generate stable and processable materials for optoelectronic devices. Here, we present a method to embed perylene dyes into a high refractive index (HRI) polysiloxane matrix applying an allyl functionalized perylene dye and hydrosilylation chemistry. In a first approach, the dye molecules were covalently integrated into the backbone of linear polyphenylmethylsiloxane chains. The fluorescent and liquid polymers were synthesized with molecular weights from 5660 up to 8400 g mol^?1. In a second approach, the dye itself was used as a cross‐linking agent between linear polyphenylmethylsiloxane chains. These preformed fluorescent batch polymers are liquids with dye concentrations between 0.025 and 8 wt %. The applied synthetic methods incorporated the dye covalently into the polymer structure and avoided the crystallization of the dye molecules and thus the formation of excimers, which would reduce the optical emission. The resulting products can be easily incorporated into curable commercially available HRI polyphenylmethylsiloxane resins. The formed materials are ideal LED encapsulants with a solid and flexible consistency, a uniform dispersion of the dyes, and adjustable mechanical properties, realized by changing the amount of perylene polymers. Further properties of the obtained materials are thermal stabilities up to 478 °C, quantum yields larger than 0.97, and high photostabilities. Thus, the covalent integration of dyes into polyphenylsiloxane structures represents a possible route for the stabilization of the organic dyes against the extreme irradiance and thermal conditions in LED applications. © 2019 The Authors. Journal of Polymer Science Part B: Polymer Physics published by Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 1062–1073     

声子色散和磁场对极性晶体中极化子自陷能的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散和磁场对极性晶体中极化子振动频率和自陷能的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数之间的变化关系.数值计算结果表明极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的增大而增大.     

Post‐Treatment of CH3NH3PbI3/PbI2 Composite Films with Methylamine to Realize High‐Performance Photoconductor Devices

Organometallic halide perovskites have attracted great research interest as light‐active materials for use in optoelectronics. Here, we report a high‐performance photoconductor based on a methylammonium lead iodide (MAPbI₃) film that was prepared from a methylamine‐treated MAPbI₃/PbI₂ perovskite film. An ultrahigh responsivity of 3.6 A W^?1 and detectivity of 5.4×10¹² Jones were obtained for the film under 0.5 mW cm^?2 white‐light illumination. In addition, under 420 nm light irradiation, the film exhibited its highest responsivity and detectivity of 30 A W^?1 and 2.4×10¹⁴ Jones, respectively. The excellent photo‐response performance results from the improved electronic quality and suppressed nonradiative recombination channels of the treated perovskite thin film.