Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures |
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| Authors: | Xin Yan Xia Zhang Junshuai Li Yao Wu Bang Li Xiaomin Ren |
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| Institution: | State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, P.R. China |
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| Abstract: | The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | nanowires quantum dots InAs InP heterostructures type‐II band alignment photoluminescence |
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