Tunneling magnetoresistance in small dot arrays with perpendicular anisotropy |
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Authors: | L F Zhang C Xu P M Hui Y Q Ma |
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Institution: | (1) Department of Physics, Suzhou University, Suzhou, 215006, P.R. China;(2) Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong;(3) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P.R. China |
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Abstract: | The tunneling magnetoresistance (TMR) of a small magnetic dot
array with perpendicular anisotropy, is studied by using a
resistor network model. Because of the competition between dipolar
interaction and perpendicular anisotropy, the TMR ratio can be up
to a maximum value (~26%) as predicted by a theoretical
model. At moderate dipolar interaction strength, the perpendicular
TMR ratio exhibits abrupt jumps due to the switching of magnetic
moments in the array when the applied field (normal to the array
plane) decreases from a saturation field. This novel character
does not occur if the dipolar interaction between particles is
quite strong. Furthermore, the effect of the array size N on TMR
is also studied and the result shows that TMR ratio fluctuates
when N increases for a moderate dipolar interaction strength.
When the applied field he is parallel to the array plane, the
in-plane TMR curve seems insensitive to the dipolar interaction
strength, but the maximum TMR ratio (~26%) can also be
obtained at he=0. |
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Keywords: | 75 47 -m Magnetotransport phenomena materials for magnetotransport 75 60 Jk Magnetization reversal mechanisms 75 50 Tt Fine-particle systems nanocrystalline materials |
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