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Growth of completely (110)-oriented Pt film on Si?(100) by using MgO as a buffer by pulsed laser deposition |
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| Authors: | XY Chen B Yang T Zhu KH Wong JM Liu ZG Liu |
| Institution: | (1) National Laboratory of Solid State Microstructures Physics and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. China, CN;(2) Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, HK |
| Abstract: | (110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices. Received: 23 January 2001 / Accepted: 27 April 2001 / Published online: 27 June 2001 |
| Keywords: | PACS: 68 55 Jk 81 15 Fg 85 50 Gk |
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