An investigation of the oxidized Ni/InAs interface |
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Authors: | A Venter JR Botha S Naidoo |
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Institution: | a Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031, South Africa b Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300, South Africa |
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Abstract: | Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O2 atmosphere. The anneal temperature and time were 450 °C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In3Ni2 and In2O3 on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the “oxidized” Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results. |
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Keywords: | 61 72 uj 61 05 c p68 37 Lp 68 47 Gh |
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