The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films |
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Authors: | OM Ntwaeaborwa PD Nsimama E Coetsee |
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Institution: | a Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300, South Africa b Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, USA |
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Abstract: | In this study, SrAl2O4:Eu2+,Dy3+ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f65d1→4f7 transition of Eu2+. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed. |
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Keywords: | 32 30 &minus r 68 37 Xy 68 60 &minus p 79 20 Ds 81 07 &minus b 87 64 Dz |
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