Conducting boron-doped single-crystal diamond films for high pressure research |
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Authors: | Gopi K Samudrala Georgiy Tsoi Andrei V Stanishevsky Jeffrey M Montgomery Samuel T Weir |
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Institution: | 1. Department of Physics , University of Alabama at Birmingham (UAB) Birmingham , AL, 35294, USA;2. L-041, Lawrence Livermore National Laboratory (LLNL) , Livermore, CA, 94550, USA |
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Abstract: | Epitaxial boron-doped diamond films were grown by microwave plasma chemical vapor deposition for application as heating elements in high pressure diamond anvil cell devices. To a mixture of hydrogen, methane and oxygen, diborane concentrations of 240–1200 parts per million were added to prepare five diamond thin-film samples. Surface morphology has been observed to change depending on the amount of diborane added to the feed gas mixture. Single-crystal diamond film with a lowest room temperature resistivity of 18 mΩ cm was fabricated and temperature variation of resistivity was studied to a low temperature of 12 K. The observed minima in resistivity values with temperature for these samples have been attributed to a change in conduction mechanism from band conduction to hopping conduction. We also present a novel fabrication methodology for monocrystalline electrically conducting channels in diamond and present preliminary heating data with a boron-doped designer diamond anvil to 620 K at ambient pressure. |
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Keywords: | 81 05 ug 72 20 -i 62 50 -p 81 15 Gh |
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