Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields |
| |
Authors: | Jun-jie Shi TL Tansley |
| |
Institution: | a State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, People's Republic of China b Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University, NSW 2109, Australia |
| |
Abstract: | Within the framework of the effective-mass approximation and variational approach, we present calculations of the bound exciton binding energy, due to an ionized donor, in wurtzite InxGa1−xN/GaN strained quantum dots (QDs), considering three-dimensional confinement of the electron and hole in the QDs and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Our results show that the position of the ionized donor, the strong built-in electric field, and the structural parameters of the QDs have a strong influence on the donor binding energy. The variation of this energy versus position of the donor ion is in double figures of milli-electron volt. Realistic cases, including the donor in the QD and in the surrounding barriers, are considered. |
| |
Keywords: | 73 21 La 71 35 &minus y 77 65 Ly 77 84 Bw |
本文献已被 ScienceDirect 等数据库收录! |
|