Spin-dependent internal photo-electron emission over metal–semiconductor junctions – a study with circularly polarised infrared radiation

The spin asymmetry of internal photo-electron emission over Schottky barriers has been investigated for Fe/GaAs (001) having close-to-ideal current–voltage characteristics. Using a low-power circularly polarised YAG laser operated at its fundamental frequency (λ=1064 nm) as well as a visible diode laser (λ=670 nm) we demonstrate that, by eliminating the photo-current due to inter-band transitions in GaAs with the infrared source, a significant enhancement to the magnetic asymmetry could be achieved. The bias dependence of the asymmetry was also measured. It was found that the values were considerably different for the photo-electrons traversing the barriers in opposite directions. Received: 15 November 2001 / Revised version: 23 March 2002 / Published online: 2 May 2002