| Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy |
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| 作者姓名： | 邱凯 尹志军 李新化 钟飞 姬长建 韩奇峰 曹先存 陈家荣 罗向东 王玉琦 |
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| 作者单位： | [1]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 [2]Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong 226007 |
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| 基金项目： | Supported the National Natural Science Foundation of China under Grant No 10574130 and the Natural Science Foundation of Jiangsu Province under No BK2004403. |
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| 摘 要： | The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.
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| 关 键 词： | 氢化物蒸汽 反应堆 压强 外延 |
| 收稿时间： | 2006-11-23 |
| 修稿时间： | 2006-11-23 |
Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy |
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| QIU Kai,YIN Zhi-Jun,LI Xin-Hua,ZHONG Fei,JI Chang-Jian,HAN Qi-Feng,CAO Xian-Cun,CHEN Jia-Rong,LUO Xiang-Dong,WANG Yu-Qi.Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy[J].Chinese Physics Letters,2007,24(5):1390-1392. |
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| Authors: | QIU Kai YIN Zhi-Jun LI Xin-Hua ZHONG Fei JI Chang-Jian HAN Qi-Feng CAO Xian-Cun CHEN Jia-Rong LUO Xiang-Dong WANG Yu-Qi |
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| Institution: | 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Heifei230031; 2diangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong 226007 |
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| Abstract: | The influence of reactor pressure on GaN layers grown by hydride vapourphase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5atm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is one of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode. |
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| Keywords: | 81 05 Ea 81 10 Kk 81 10 -h 81 15 Hi 81 70 Fy |
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