超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展，其中包括扭快光电材料的特性、高速光电器件的基本原理，着重介绍了若干主要的用快光电测量技术．     

高压超大电流光电导开关及其击穿特性研究

研制了耐压达32 kV,通态峰值电流达3.7 kA的高压超大电流半绝缘GaAs光电导开关.分析了光电导开关在强场下的击穿机理,指出对于间接能带间隙光导材料(如Si)制作的光电导开关,开关的击穿电压主要由陷阱填充限制电导模型决定.而对于直接能带间隙光导材料(如GaAs,InP等)制作的光电导开关,开关击穿主要是由开关体负阻效应在开关阳极产生的空间电荷累积所导致的开关阳极电场剧增引起的.基于转移电子效应对GaAs光电导开关击穿电压进行了理论计算,计算结果与实验相一致. 关键词： 光电导开关 击穿 转移电子效应 陷阱填充     

Role of Temperature in Controlling Performance of Photorefractive Organic Glasses

We present a detailed temperature‐dependence study of dielectric, birefringent, conductive, and photorefractive (PR) properties of high‐performance low‐molecular weight organic glasses that contain 2‐dicyanomethylene‐3‐cyano‐2,5‐dihydrofuran (DCDHF) derivatives. DCDHF organic glasses sensitized with C₆₀ exhibit high two‐beam coupling gain coefficients in the red‐wavelength region. However, in the best performing DCDHF glasses at room temperature the PR dynamics are limited by slow molecular reorientation in the electric field. While orientational and, therefore, PR speed can be significantly improved by increasing the temperature above the glass‐transition temperature of the material, the steady‐state performance may worsen. Comprehensive study of the temperature dependence of various processes, which contribute to the PR effect in DCDHF glasses, clarifies the limiting factors and allows for optimization of the overall PR performance.     

Mesomorphic and Photoconducting Behavior of 2-(2-Hydroxy-4-alkoxybenzylideneamino)-9-methylcarbazoles

The mesomorphic properties of 2-(2-hydroxy-4-alkoxybenzylideneamino)-9-methyl-carbazoles were investigated and the photoconducting behavior of the crystalline, nematic and isotropic liquid phases were compared for the pentyloxy compound. It was found that the behavior in the nematic phase is comparable with that in the isotropic liquid phase, both being fluid, rather than that in the crystalline phase. The carrier transport mechanisms and the carrier species are implied to be ionic. The current-voltage characteristics showed a new behavior in the fluid states, being similar to that of the negative resistance.     

超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展,其中包括扭快光电材料的特性、高速光电器件的基本原理,着重介绍了若干主要的用快光电测量技术．     

单层结构ε-CuPc光导体的静电照相特性──ε-CuPc的浓度的影响

本研究将ε-酞菁铜(ε-CuPc)按不同浓度分散在一种聚酯树脂(Vylon200)中,并布在铝板基上构成光导体。测试结果表明,这种光导体可用作正充电或负充电光导体,但在相同的有效充电电位下,即,在V-V_T(其中V_T为临界充电电位)相同的条件下,负充电的表面饱和电压高于正充电的表面饱和电压。当ε-CuPc的质量分数超过40%时,光导体的暗衰减速度过快;当ε-CuPc的质量分数低于20%时,暗衰减速度虽然得到控制,但光衰减速度太低,而且残留电位大幅度增高。ε-CuPc的质量分数在30～40%被认为是适当的。