Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐渐变小.铁电测量表明,Mo掺杂使SBTi的铁电性能得到较大改善.随掺杂量x的增加,样品的剩余极化(2Pr)呈现出先增大,后减小的规律.在x=0.06时,2Pr达到最大值26.5 μC/cm2,与SrBi4TiO15(2Pr=12.2 μC/cm2)相比,提高117%.材料的矫顽场Ec在掺杂后增加仅为20%左右.SBTi的居里温度受掺杂的影响甚微,说明Mo对SrBi4Ti4O15的掺杂基本未影响材料原有的良好的热稳定性.     

Heat capacity, enthalpy and entropy of strontium bismuth niobate and strontium bismuth tantalate

The heat capacities and enthalpy increments of strontium bismuth niobate SrBi₂Nb₂O₉ (SBN) and strontium bismuth tantalate SrBi₂Ta₂O₉ (SBT) were measured by the relaxation method (2–150 K), Calvet-type heat-conduction calorimetry (305–570 K) and drop calorimetry (773–1373 K). The temperature dependences of non-transition heat capacities in the form C_pm = 324.47 + 0.06371T − 5.0755 × 10⁶/T² J K⁻¹ mol⁻¹ (298–1400 K) and C_pm = 320.22 + 0.06451T − 4.7001 × 10⁶/T² J K⁻¹ mol⁻¹ (298–1400 K) were derived for SBN and SBT, respectively, by the least-squares method from the experimental data. Furthermore, the standard molar entropies at 298.15 K S_m°(SBN)=327.15±0.80 and S_m°(SBT)=339.23±0.72 J K⁻¹ mol⁻¹ were evaluated from the low-temperature heat capacity measurements.     

无机盐溶液源溶胶-凝胶法制备锶铋钽铁电陶瓷薄膜过程研究

采用可溶性无机盐Sr(NO₃)₂,Bi(NO₃)₃及HTaF6为原料,以柠檬酸、乙二醇及乙二胺四乙酸(EDTA)为络合剂,利用溶胶-凝胶旋转涂覆工艺,分别在Al₂O₃和Pt/Ti/SiO₂/Si的衬底上制备了SrBi₂Ta₂O₉(SBT)铁电陶瓷薄膜.采用SEM,XRD及FTIR等微观分析手段,对制备的SBT溶胶与薄膜过程机理进行了实验研究.结果表明,由无机盐溶液原料络合合成SBT溶胶是此方法制膜的关键,其中络合剂的种类、用量和pH值的控制等是重要的影响因素.制备了相组成均一、薄膜表面致密、均匀、无开裂、晶粒尺寸为150nm的多晶膜,获得了剩余极化(2P_r)与矫顽电场强度(2E_c)分别为9.6μC/cm²与76kV/cm铁电性能较好的薄膜材料.     

溶胶-凝胶法制备SrBi2Ta2O9铁电陶瓷薄膜

溶胶-凝胶法制备SrBi2Ta2O9铁电陶瓷薄膜     

熔盐法合成SrBi2Nb2O9粉体

以分析纯的Bi2O3,Nb2O5 和 SrCO3为原料,以KCl和NaCl为熔盐,采用熔盐法在800～1000 ℃合成了片状SrBi2Nb2O9粉体.研究了熔盐含量及合成温度对晶体定向生长和粉体形貌的影响.结果表明:与固相法相比,熔盐法是一种有效的晶粒定向生长的方法.制备的粉体呈明显的片状和高度的各向异性,且无团聚现象产生.沿(00l)面择优生长适合的熔盐含量为60;质量分数,随着熔盐含量的增加,晶粒尺寸逐渐增大.合成温度在900 ℃为最优,可获得较大尺寸和高度各向异性的SrBi2Nb2O9粉体.     

La掺杂SrBi4Ti4O15铁电材料性能研究

按x=0 0 0 ,0 10 ,0 2 5 ,0 5 0 ,0 75和 1 0 0 ,采用固相烧结工艺 ,制备了不同La掺杂量的SrBi4-xLaxTi4O1 5的陶瓷样品 .用x射线衍射对其微结构进行了分析 ,并测量了铁电、介电性能 .结果发现 ,La掺杂未改变SrBi4Ti4O1 5的晶体结构 .随掺杂量的增加 ,样品的矫顽场 (Ec)下降 ,剩余极化 ( 2Pr)先增大 ,后减小 .在x =0 2 5时 ,2Pr 达到极大值 ,为2 4 2 μC·cm- 2 ,这时Ec=60 8kV·cm- 1 ,与SrBi4Ti4O1 5相比 ,2Pr 增加了近 5 0 % ,而Ec 下降了近 2 5 % ,材料铁电性能显著提高 .SrBi4-xLaxTi4O1 5的相变温度Tc 随x的增加逐渐降低 ,x =0 2 5时 ,Tc=45 1℃ .在x =0 75 ,1 0 0时 ,样品出现弛豫铁电体的典型特征     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜. 研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi4Ti3O12薄膜易于沿c轴择优生长,并有利于SrBi2Ta2O9/Bi4Ti3O12复合薄膜的生长.合理的SrBi2Ta2O9/Bi4Ti3O12厚度配比能获得较好的铁电性能和优良的抗疲劳特性,SrBi2Ta2O9/Bi4Ti3O12厚度配比为1∶3的复合薄膜的剩余极化强度和矫顽电场分别为8.1 μC/cm2 和 130 kV/cm,其无疲劳极化开关次数达1011以上.     

Doping effect on the phase transition temperature in ferroelectric SrBi2−xNdxNb2O9 layer‐structured ceramics: a micro‐Raman scattering study

The temperature dependence of Raman spectra for SrBi_2−xNd_xNb₂O₉ ceramics (x from 0 to 0.2) has been studied in a wide temperature range from 80 to 873 K. It is found that the peak position of the A_1g[Nb] phonon mode at 207 cm^–1, which is directly associated with the distortion of NbO₆ octahedron, decreases with increasing Nd composition, while the A_1g[O] phonon mode at 835 cm^–1 increases. Moreover, both the peak position and intensity of the A_1g[Nb] phonon mode reveal strong anomalies around the ferroelectric to paraelectric phase transition temperature. It indicates that the phase transition temperature decreases from about 710 to 550 K with increasing Nd composition, which is due to the fact that the introduction of Nd ions in the Bi₂O₂ layers reduces the distortion extent of NbO₆ octahedron. Copyright © 2011 John Wiley & Sons, Ltd.