La单掺4H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法，对未掺杂及La掺杂4H-SiC的电子结构和光学性质进行理论计算。计算结果表明，未掺杂4C-SiC其禁带宽度为2.257 eV。La掺杂后带隙宽度下降为1.1143eV，导带最低点为G点，价带最高点为F点，是P型间接半导体。掺杂La原子在价带的低能区间贡献比较大，而对价带的高能区和导带的贡献比较小。未掺杂4H-SiC在光子能量为6.25 eV时，出现一个介电峰，这是由于价带电子向导带电子跃迁产生。而La掺杂后，出现3个介电峰，分别对应的光子能量为0.47eV、2.67eV、6.21eV，前两个介电峰是由于价带电子向杂质能级跃迁产生，第三个介电峰是由于价带电子向导带电子跃迁产生。La掺杂后4H-SiC变成负介电半导体材料。未掺杂4h-SiC的静态介电常数为2.01，La掺杂的静态常数为12.01。     

Ni–Al composite hydroxides fabricated by cation–anion double hydrolysis method for high-performance supercapacitor

Chemical doping of nickel hydroxide with other cations(e.g. Al~(3+)) is an efficient way to enhance its electrochemical capacitive performances. Herein, a simple cation–anion(Ni~(2+)and AlO_2) double hydrolysis method was developed toward the synthesis of nickel–aluminum(Ni–Al) composite hydroxides. The obtained composite hydroxides possesses a porous structure, large surface area(121 m~2/g) and homogeneous element distribution. The electrochemical test shows that the obtained composite hydroxides exhibits a superior supercapacitive performances(specific capacitance of 1670F/g and rate capability of 87% from 0.5 A/g to 20 A/g) to doping-free nickel hydroxide(specific capacitance of 1227 F/g and rate capability of 47% from 0.5 A/g to 20 A/g). Moreover, the galvanostatic charge/discharge test displays that after 2000 cycles at large current density of 10 A/g, the composite hydroxides achieves a high capacitance retention of 98%, indicative of an excellent electrochemical cycleability.     

Eu-doped ZnO nanoparticles: Sonochemical synthesis,characterization, and sonocatalytic application

Undoped and europium (III)-doped ZnO nanoparticles were prepared by a sonochemical method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) analysis. The crystalline sizes of undoped and 3% Eu-doped ZnO were found to be 16.04 and 8.22 nm, respectively. The particle size of Eu-doped ZnO nanoparticles was much smaller than that of pure ZnO. The synthesized nanocatalysts were used for the sonocatalytic degradation of Acid Red 17. Among the Eu-doped ZnO catalysts, 3% Eu-doped ZnO nanoparticles showed the highest sonocatalytic activity. The effects of various parameters such as catalyst loading, initial dye concentration, pH, ultrasonic power, the effect of oxidizing agents, and the presence of anions were investigated. The produced intermediates of the sonocatalytic process were monitored by GC–Mass (GC–MS) spectrometry.     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

Diboraanthracene-Doped Polymer Systems for Colour-Tuneable Room-Temperature Organic Afterglow

Organic ultralong room temperature phosphorescence (RTP), or organic afterglow, is a unique phenomenon, gaining widespread attention due to its far-reaching application potential and fundamental interest. Here, two laterally expanded 9,10-dimesityl-dihydro-9,10-diboraanthracene (DBA) derivatives are demonstrated as excellent afterglow materials for red and blue-green light emission, which is traced back to persistent thermally activated delayed fluorescence and RTP. The lateral substitution of polycyclic DBA scaffold, together with weak transversal electron-donating mesityl groups, ensures the optimal molecular properties for (reverse) intersystem crossing and long-lived triplet states in a rigid poly(methyl methacrylate) matrix. The achieved afterglow emission quantum yields of up to 3 % and 15 %, afterglow lifetimes up to 0.8 s and 3.2 s and afterglow durations up to 5 s and 25 s (for red and blue-green emitters, respectively) are attributed to the properties of single molecules.     

Facile synthesis of silver doped-copper oxide nano materials utilizing areca catechu (AC) leaf extract and their antidiabetic and anticancer studies

The present research highlights physical significance of green combination of metal oxide nanomaterials utilizing medicinal plant which has widely analyzed in different medical applications i.e., medicinal science, therapeutics. In this paper, we discussed environmentally benign approach for synthesizing silver doped copper oxide nanoparticles (Ag–CuO NPs) utilizing (ACLE). Scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) were utilized to confirm the size, crystalline structure and surface morphology of the obtained nanomaterials. The monoclinic crystalline structure of the Ag–CuO NPs as produced was revealed by XRD patterns. Morphological analysis disclosed the nano-based spherical configuration of Ag–CuO NPs, as well as their morphology and elemental composition. The anti-diabetic effect of Ag–CuO NPs was further investigated utilizing a yeast cell model and amylase inhibition. Here, a decrease in intracellular glucose and a delay in carbohydrate digestion indicate promising antidiabetic action. Furthermore, the prepared nanomaterial showed anticancer potential against the MCF-7 cancer cell line, with an IC ₅₀ value of 11.21 g/ml.     

Ce掺杂CrSi2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法，对未掺杂及Ce掺杂CrSi2的电子结构和光学性质进行理论计算。计算结果表明，未掺杂CrSi2是间接带隙半导体，其禁带宽度为0.392 eV，掺杂Ce元素，仍然是间接半导体，带隙宽度下降为0.031eV。未掺杂CrSi2在费米能级附近主要由Cr-5d、Si-3p态贡献。Ce掺杂后在费米能级附近主要由Cr-5d轨道，Ce-4f轨道，C-2p，Si-3p轨道贡献，掺杂后电导率提高。未掺杂CrSi2有两个介电峰，掺杂后，只有一个介电峰。未掺杂CrSi2，在能量为6.008处吸收系数达到最大值，掺杂后在能量为5.009eV处，吸收系数达到最大值。     

γ-MnO2/polyaniline composites: Preparation, characterization, and applications in microwave absorption

MnO₂/doped polyaniline (PANI) is prepared by an in situ polymerization method using γ-MnO₂ as the addition agent and hydrochloric acid as the doping agent. Products are characterized by FT-IR, UV-vis, XRD, and TEM. Conductivity, electromagnetic properties, and microwave absorption properties are first discussed on the basis of structural characterization. The as-prepared products of MnO₂/PANI are partially crystalline in nature and spherical in pattern with grain sizes of 50-70 nm. MnO₂ particles are successfully decorated with doped PANI. MnO₂/PANI displays moderate electric conduction, excellent dielectric losses, and microwave absorption capabilities. Compared to pure MnO₂, the dielectric and reflection loss properties of MnO₂/PANI composites exhibit significant improvements, with an effective absorption band at 5 GHz under −10 dB and maximum reflection loss of −21 dB at 13.56 GHz. Pure MnO₂ shows an effective absorption band of 3 GHz under −10 dB and a maximum reflection loss of −14.20 dB at 11.5 GHz. Thus, MnO₂/PANI composites are found to be a promising microwave absorption material.     

Structural and catalytic properties of lanthanide (La, Eu, Gd) doped ceria

Ce_0.9M_0.1O_2−δ mixed oxides (M=La, Eu and Gd) were synthesized by coprecipitation. Independent of the dopant cation, the obtained solids maintain the F-type crystalline structure, characteristic of CeO₂ (fluorite structure) without phase segregation. The ceria lattice expands depending on the ionic radii of the dopant cation, as indicated by X-ray diffraction studies. This effect also agrees with the observed shift of the F_2g Raman vibrational mode. The presence of the dopant cations in the ceria lattice increases the concentration of structural oxygen vacancies and the reducibility of the redox pair Ce⁴⁺/Ce³⁺. All synthesized materials show higher catalytic activity for the CO oxidation reaction than that of bare CeO₂, being Eu-doped solid the one with the best catalytic performances despite of its lower surface area.     

Electronic structures of N- and C-doped NiO from first-principles calculations

The large intrinsic band gap of NiO has hindered severely its potential application under visible-light irradiation. In this Letter, we have performed first-principles calculations on the electronic properties of N- and C-doped NiO to ascertain if its band gap may be narrowed theoretically. It was found that impurity bands driven by N 2p or C 2p states appear in the band gap of NiO and that some of these locate at the conduction band minimum, which leads to a significant band gap narrowing. Our results show that N-doped NiO may serve as a potential photocatalyst relative to C-doped NiO, due to the presence of some recombination centres in C-doped NiO.