微流控芯片－质谱联用技术在细胞代谢与药物代谢中的研究进展

细胞代谢与药物代谢是新药筛选和研发的关键环节,在推动人类大健康发展进程中具有重要意义。通常情况下,细胞代谢和药物筛选以传统细胞培养测定研究为主,多为静态培养条件,无法很好地模拟体内细胞动态微环境。微流控芯片－质谱联用是近年发展起来的一种新型高通量分析技术。微流控芯片模块可高度模拟细胞体内动态微环境,与质谱联用可实时在线检测样品物质,具有高效、快速、简便、样品和试剂消耗低等特点,广泛应用于细胞代谢和药物代谢分析,有利于加速药物筛选研发进程。该文重点综述了微流控芯片－质谱联用技术及其在细胞代谢和药物代谢方面的应用概况,并对目前存在的局限性进行了讨论和展望,以期为微流控芯片－质谱联用技术在新药研发与细胞分析领域的发展提供参考。     

飞机风挡结构抗鸟撞一体化设计技术研究

结合大型非线性有限元分析软件，实践了飞机风挡结构由初步设计、数值仿真以及实验验证的一体化设计过程，建立了适于风挡结构材料的非线性黏弹性本构计算接口程序，对合理选取单元类型、材料模型、边界条件影响以及试验设计等工作细节进行了深入研究，通过实验与仿真计算结果的对比，验证了数值仿真计算模型的精度．为飞机风挡的抗鸟撞结构设计-数值仿真-实验验证一体化技术提供了支持论证．     

基于层次分析法的光接口方案选取研究

通过实际案例(光接口的选取),借助MATLAB编得源程序,进行层次分析法(AHP)的介绍、计算使用和推理分析,为今后遇到类似问题时,如何分析和解决提供了一种科学有效的方法.     

基于双移位器的FLEXIO模拟SPI总线的设计与实现

针对嵌入式系统设计中专用的串行外设接口SPI数量不能满足要求的问题,提出一种基于双移位器的FlexIO来模拟SPI通信总线的全新方案,首先阐述了FlexIO的硬件架构,然后在分析标准SPI通信协议的基础上,通过对其内部定时器,移位器与芯片引脚的合理配置并结合少量的软件编程设计,最终模拟出拥有全双工,同步功能的SPI通信总线。通过与标准SPI从机通信的实验,表明了用FlexIO模拟的SPI通信总线具有硬件配置灵活,软件需求少且通信可靠的优点,同时也对用它来模拟其他类型的串行通信总线提供了一定的参考价值。     

液质联用中接口离子化新技术

液相色谱-质谱联用(简称液质联用,LC-MS)将色谱的高分离效能与质谱强大的结构测定功能结合,不仅实现了对复杂混合物更准确的定性定量分析,而且简化了样品的前处理过程,使样品分析更简便,在药物分析、食品与环境分析以及生物样品检测等众多领域得到了广泛的应用。作为LC-MS的核心组成部分,液质接口的作用是将LC的液体引入,发生电离,并将生成的离子传输进MS。因此,接口离子化技术的改进直接影响了LC-MS的发展和应用。为了获得更高的灵敏度和更广泛的适用性,研究人员一直致力于离子化技术的研究,以促进分析物的解吸,提高其电离和传输效率,减少基质效应的干扰。本文针对近年来LC-MS接口离子化技术的改进和发展,从离子化原理出发,对接口离子源的构造、影响电离的因素、以及相关的应用进行综述,探讨其优缺点,并对LC-MS接口离子化技术的发展趋势进行了展望。     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

工业控制系统中的USB接口系统设计

以三星公司的S3C44B0X为主控CPU,沁恒电子的CH375芯片为USB设备的接口芯片,给出了实际应用中的工控设备的USB接口系统原理图,并给出了相关的源代码。该接口系统运行稳定,传输速度也较快,目前已在应用中。     

FRACTURE ASSESSMENT OF AN INTERFACE CRACK BETWEEN TWO DISSIMILAR MAGNETOELECTROELASTIC MATERIALS UNDER HEAT FLOW AND MAGNETOELECTROMECHANICAL LOADINGS

A magnetoelectrically permeable interface crack between two semi-infinite magnetoelectroelastic planes under the action of a heat flow and remote magnetoelectromechanical loadings is considered, where the assumption of frictionless contact between two dissimilar halfplanes is adopted. Not only the solutions of the interface crack problem are presented in an explicit form, but also the general condition for the transition from a perfect thermal contact of two magnetoelectroelastic bodies to their separation is given.     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

THE ADAPTIVE IMMERSED INTERFACE FINITE ELEMENT METHOD FOR ELASTICITY INTERFACE PROBLEMS

In this paper, we propose adaptive finite element methods with error control for solving elasticity problems with discontinuous coefficients. The meshes in the methods do not need to fit the interfaces. We establish a residual-based a posteriori error estimate which is $λ$-independent multiplicative constants; the Lamé constant $λ$ steers the incompressibility. The error estimators are then implemented and tested with promising numerical results which will show the competitive behavior of the adaptive algorithm.