含油废水紫外荧光信息管理系统的开发

针对含油废水的荧光信息管理,基于管理信息系统(MIS)系统,根据面向对象的程序设计要求,分析了含油废水紫外荧光信息管理系统的建设目标、体系结构、数据组织、模块功能等,使用Visual FoxPro开发了用于典型行业的含油废水紫外荧光信息管理系统,实现了对样本进行处理时信息的输入、查询、删除、对比以及数据输出等功能.使得...     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.     

一种C/S与B/S混合结构的饭店管理系统

介绍了C／S和B／S混合结构对改变饭店管理模式的作用，讨论了用PB8．0构造C／S和B／S混合结构的基本体系，分析了C／S结构饭店管理系统向C／S和B／S混合结构转换中的移植策略和基本步骤．     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

中国花卉业信息化管理的初步研究

本文针对中国花卉行业提出的大生产，大市场，大流通的产业格局，分析了中国花卉行业建立全国性的信息管理的必要性和紧迫性，并提出了系统开发的初步设想。     

Internet与管理信息系统的变革

本文阐述了Ｉｎｔｅｒｎｅｔ／Ｉｎｔｒａｎｅｔ的有关概念和技术，分析了传统ＭＩＳ的不足与缺陷，并且结合ＭＩＳ的特点和Ｉｎｔｅｒｎｅｔ／Ｉｎｔｒａｎｅｔ的技术，提出了一种新型的ＭＩＳ结构。     

线性电压扫描下1VIIS器件瞬态的简单模型

本文用准平衡模型分析讨论了线性电压扫描下MIS器件的I/V瞬态.文中除了给出一般的处理方法以外，还给出了几种不同电压扫描率下I/Y特性的计算结果，并与已往的模型作了比较.     

国家关键技术管理计算机系统研究

本文根据国家关键技术管理工作的特点，本着提高决策质量，满足用户要求的原则，分析和设计国家关键技术管理计算机系统，为高层次宏观决策提供丰富的信息支持。