Influence of crosslinking on charge carrier mobility in crosslinkable polyfluorene derivatives

Carrier mobility is a key parameter for the application of conjugated polymers. In this work, a series of polyfluorenes (PF2/6) with different fractions of crosslinkable acrylate groups is investigated. Mobility measurements are carried out to assess the influence of crosslinking with different photoinitiators on the performance of the material. For the regime of low to medium charge carrier density, relevant for OLEDs and OPVs, we used a novel technique based on the injection of charge carriers from the electrodes of an optoelectronic device: MIS‐CELIV (MIS: metal‐insulator‐semiconductor). For large charge carrier densities we performed OFET measurements. We find that using optimized conditions crosslinking does not influence the hole mobility in the investigated system. Furthermore, we demonstrate that the crosslinking process may be triggered solely by thermal activation and UV‐illumination without the need of any initiator. Thus, densely crosslinked networks are obtained without the formation of undesired decomposition products from added photoinitiator. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 112–120     

Analytical Modeling of Metal-Insulator-Semiconductor Interconnects Using the Energy Based Approach

Simple formulae for calculating circuit parameters of metal-insulator-semiconductor (MIS) interconnects are obtained using the energy based approach. The energy based approach results in a new consistent equivalent transmission line model that exhibits power equivalence to the original MIS waveguide. This new model has solid physical foundation and is valid for a wide range of frequency and impurity doping rate. At the quasi-TEM limit, this new model reduces to the existing model that was obtained using the contour integral based approach.     

一个计算机管理控制一体化系统的网络分析与设计

描述了一个集散控制系统ＲＳ－３与用于企业信息管理的Ｅｔｈｅｒｎｅｔ网络系统的互连设计方案，旨在为实现企业计算机管理控制一体化系统提供可行的硬件支撑环境。     

表面光电压测量中的最佳相位

对基于锁相放大技术的表面光电压测量中的“最佳相位"的物理意义及影响因素进行了系统的理论分析及实验验证.结果表明,对于通常所采用的金属-绝缘体-半导体（MIS）“三明治"测量结构,其等效阻抗会很大程度地影响到最佳相位.对于体相材料,“最佳相位"仅与测量条件有关;对于纳米材料等体系,光照可以改变MIS结构的等效电阻(Rins)、等效电容(Cins),从而将引起最佳相位角的显著变化,使“最佳相位”与所研究材料的特性直接关联起来.因此,该手段有可能成为一种新的纳米材料光电检测方法.     

Analytical solution of the Boltzmann--Poisson equation and its application to MIS tunneling junctions

In order to consider quantum transport under the influence of an electron--electron (e--e) interaction in a mesoscopic conductor, the Boltzmann equation and Poisson equation are investigated jointly. The analytical expressions of the distribution function for the Boltzmann equation and the self-consistent average potential concerned with e--e interaction are obtained, and the dielectric function appearing in the self-consistent average potential is naturally generalized beyond the Thomas--Fermi approximation. Then we apply these results to the tunneling junctions of a metal--insulator--semiconductor (MIS) in which the electrons are accumulated near the interface of the semiconductor, and we find that the e--e interaction plays an important role in the transport procedure of this system. The electronic density, electric current as well as screening Coulombic potential in this case are studied, and we reveal the time and position dependence of these physical quantities explicitly affected by the e--e interaction.     

Deposition of aluminum nitride thin film on Si(1 1 1) by KrF excimer laser and its characterizations

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3 Å/pulse has been achieved with laser fluence of 1500 mJ/cm² and at substrate temperature of 250 K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.     

基于构件的软件设计方法在解决MIS系统开发和维护敏捷性特征中的应用

对采用基于构件的软件设计方法的特点,运行原理及构件的构造进行了论述,在借鉴传统制造业“敏捷制造”思想的基础上,提出了采用该方法来进行企业MIS系统的开发的具体过程,从而解决企业MIS系统开发的速度及后期升级和维护的“可重构”、“可重用”、“可扩充”等敏捷性特征问题。     

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

An influence of electronic states at an insulator/GaN interface on the behavior of excess holes in an ultraviolet-illuminated metal/ SiO₂/n-GaN structure has been studied by numerical simulations for weak (gate bias of −0.1 V ) and strong (−1 V ) depletion, in a wide range of excitation light intensities (from 10¹⁰ to 10²⁰ photons cm⁻² s⁻¹) and for various bulk carrier lifetimes (from 1 to 100 ns). It has been found that the interface states with densities of 10¹² eV ⁻¹ cm⁻² dramatically reduce the total (integrated in the whole GaN layer) density of photogenerated holes and thus degrade the sensitivity of the metal/insulator/GaN-based photodetector.     

The Keto-Switched Photocatalysis of Reconstructed Covalent Organic Frameworks for Efficient Hydrogen Evolution

The keto-switched photocatalysis of covalent organic frameworks (COFs) for efficient H₂ evolution was reported for the first time by engineering, at a molecular level, the local structure and component of the skeletal building blocks. A series of imine-linked BT-COFs were synthesized by the Schiff-base reaction of 1, 3, 5-benzenetrialdehyde with diamines to demonstrate the structural reconstruction of enol to keto configurations by alkaline catalysis. The keto groups of the skeletal building blocks served as active injectors, where hot π-electrons were provided to Pt nanoparticles (NPs) across a polyvinylpyrrolidone (PVP) insulting layer. The characterization results, together with density functional theory calculations, indicated clearly that the formation of keto-injectors not only made the conduction band level more negative, but also led to an inhomogeneous charge distribution in the donor-acceptor molecular building blocks to form a strong intramolecular built-in electric field. As a result, visible-light photocatalysis of TP-COFs-1 with one keto group in the skeletal building blocks was successfully enabled and achieved an impressive H₂ evolution rate as high as 0.96 mmol g⁻¹ h⁻¹. Also, the photocatalytic H₂ evolution rates of the reconstructed BT-COFs-2 and -3 with two and three keto-injectors were significantly enhanced by alkaline post-treatment.