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1.
Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu2−xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.  相似文献   
2.
The crystal and molecular structure of tris(m-chlorophenyl)phosphine selenide, C18H12Cl3PSe (I), was investigated by X-ray diffraction (XRD) analysis. The trigonal rhombohedral structure of I (space group \(R\overline 3 c\), a = 14.110(2) Å, c = 32.360(4) Å, Z = 12) was solved by direct methods and refined by least squares in an anisotropic approximation (R = 0.029) for 1319 averaged measured reflections (CAD-4 automatic diffractometer, λCuKα).  相似文献   
3.
赵华绒  赵新建  黄宪 《有机化学》2002,22(11):926-928
醋酸烯丙酯被Pd(PPh3)4-SmI2还原,并发生中间体π-烯丙基钯络合物的极性 反转,而后与芳基硒溴化物作用,生成烯丙基硒醚.  相似文献   
4.
A general and easy method for the synthesis of several vinyl selenides using NaBH4 and BMIMBF4 as a recyclable solvent is described. This efficient and improved method furnishes the corresponding vinyl chalcogenides preferentially with Z configuration. We also observed that when the same protocol was applied to phenyl acetylene, (E)-bis-phenylseleno styrene was obtained in good yield and with high selectivity.  相似文献   
5.
Solid-phase methodology has been rapidly and extensively applied to the preparation of small organic molecules recently1. It might be argued that selenoxide syn-elimination provided the principal impetus for the development of organoselenium chemistry. In addition, the required selenoxides are readily available from the oxidation of the corresponding selenides, which in turn can be prepared by the reaction of selenium-stabilized carbanions with various electrophilic substrates2. However, or…  相似文献   
6.
Preparation and Crystal Structure of the First Polymeric Phosphorus Selenide catena-(P4Se4)x Catena-(P4Se4)x was prepared in crystalline form from the elements using iodine as a catalyst, and characterized by means of X-ray diffraction and IR spectroscopy. Single-crystal investigations (space group P21/c, a = 1 119.2(3), b = 728.2(2), c = 1 142.5(3) pm, β = 115.91(2)°, V = 837.5(7) · 106 pm3) revealed parallel chains of P4Se3 hetero-norbornane units linked via Se atoms. Thus, being the first phosphorus selenide which does not contain discrete molecules, catena-(P4Se4)x can be regarded as a polymeric form of α-P4Se4 or as a crystalline modification of vitrous phosphorus selenide.  相似文献   
7.
Two isostructural crown-like heteroselenometallic cluster compounds, [Et4N]4[(μ5-WSe4)(CuX)5(μ-X)2] (X = Cl 1, Br 2), were prepared from the reactions of [Et4N]2[WSe4] with CuX and [Et4N]X· xH2O in the presence of 2-picoline and characterized by single-crystal diffraction analysis. The [(μ5-WSe4)(Cu-X)5(μ-X)2]4− anions in the cluster compounds consists of five CuX fragments coordinated to the five edges of the tetrahedral [WSe4]2− moiety along with two bridging halides connected to each of the two pairs of the symmetric copper atoms, exhibiting a novel crown-like core structure. The nonlinear optical absorption and refraction of cluster compound 2 were determined to be α2 = 6.15 × 10−10 m/W and n 2 = 4.18 × 10−11 esu, respectively.  相似文献   
8.
Examples of new dendrimers are presented. In the first, the effect on electron transfer rate attenuation is investigated for two dendrimer isomers that differ only in the linkage (ortho- versus meta-linked) of the phenyl ether units within one generation of the structure. Second, the effect of encapsulation on electrochemical and luminescence behavior of a new type of rhenium selenide cluster core dendrimer is illustrated.  相似文献   
9.
A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu3Se2) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.  相似文献   
10.
Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.  相似文献   
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