Growth and raman scattering of aluminium gallium orthophosphate piezoelectric crystals

A new series of non-ferroelectric crystals, the piezoelectric solid solution aluminium gallium orthophosphate Al_1-xGa_xPO₄ (AGP, 0 < x < 1) system has been successfully developed by a hydrothermal method. The AGP crystal with X = 0.10 shows a phase transition temperature T_−β = 587 ± 3 °C with a cell parameters A = b = 0.49386(3) and C = 1.09563(2) nm. Raman spectra including directional dispersion in AGP are similar to those from -AIPO4 and -quartz crystals, indicating all of them belong to an isomorphic family, the short-range interaction being dominant in AGP. Comparison with -AIPO4 crystals, there exists an apparent red shift of the mode frequency and a smaller TO/LO mode splitting of the E species in the AGP crystals.     

Macroscopic Polarization Change of Mononuclear Valence Tautomeric Cobalt Complexes Through the Use of Enantiopure Ligand

The crystallization of a complex having electron transfer properties in a polar space group can induce the polarization switching of a crystal in a specific direction, which is attractive for the development of sensors, memory devices, and capacitors. Unfortunately, the probability of crystallization in a polar space group is usually low. Noticing that enantiopure compounds crystallize in Sohncke space groups, this paper reports a strategy for the molecular design of non-ferroelectric polarization switching crystals based on the use of intramolecular electron transfer and chirality. In addition, this paper describes the synthesis of a mononuclear valence tautomeric (VT) cobalt complex bearing an enantiopure ligand. The introduction of enantiomer enables the crystallization of the complex in the polar space group (P2₁). The polarization of the crystals along the b-axis direction is not canceled out and the VT transition is accompanied by a change in the macroscopic polarization of the polar crystal. Polarization switching via electron transfer is realized at around room temperature.     

A Semiconducting Organic–Inorganic Hybrid Perovskite‐type Non‐ferroelectric Piezoelectric with Excellent Piezoelectricity

Piezoelectric materials are a class of important functional materials applied in high‐voltage sources, sensors, vibration reducers, actuators, motors, and so on. Herein, [(CH₃)₃S]₃[Bi₂Br₉]( 1 ) is a brilliant semiconducting organic–inorganic hybrid perovskite‐type non‐ferroelectric piezoelectric with excellent piezoelectricity. Strikingly, the value of the piezoelectric coefficient d₃₃ is estimated as ≈18 pC N^?1. Such a large piezoelectric coefficient in non‐ferroelectric piezoelectric has been scarcely reported and is comparable with those of typically one‐composition non‐ferroelectric piezoelectrics such as ZnO (3pC N^?1) and much greater than those of most known typical materials. In addition, 1 exhibits semiconducting behavior with an optical band gap of ≈2.58 eV that is lower than the reported value of 3.37 eV for ZnO. This discovery opens a new avenue to exploit molecular non‐ferroelectric piezoelectric and should stimulate further exploration of non‐ferroelectric piezoelectric due to their high stability and low loss characteristics.     

非铁电压电复合陶瓷SrTiO3-Bi12TiO20（ST-BT）的正电子湮没谱学研究

采用传统陶瓷烧结工艺成功制备出新型非铁电压电复合陶瓷SrTiO₃-Bi₁₂TiO₂₀（ST-BT）,利用正电子湮没技术,对ST-BT复合陶瓷烧结过程进行了研究,讨论了烧结过程中材料内部的缺陷变化特征,给出了烧结温度对该复合陶瓷结晶度和缺陷结构的影响.发现烧结温度在860—940℃,烧结时间为3 h的实验条件下,ST-BT复合陶瓷已趋于稳定,出现了大量的单空位型缺陷.烧结温度超过980℃将引起Bi₁₂TiO₂₀相的大量分解,杂相的出现造成缺陷的聚集,形成大尺度的微空洞.实验结果表明,烧结温度在920—940℃的烧结条件下,ST-BT复合陶瓷的结构特性及压电性能均表现出较好的稳定性.