Imaging Photodissociation Dynamics of MgO at 193 nm

In this work, we used time-sliced ion velocity imaging to study the photodissociation dynamics of MgO at \mbox{193 nm}. Three dissociation pathways are found through the speed and angular distributions of magnesium. One pathway is the one-photon excitation of MgO(X\begin{document}$^1\Sigma^+$\end{document}) to MgO(G\begin{document}$^1\Pi$\end{document}) followed by spin-orbit coupling between the G\begin{document}$^1\Pi$\end{document}, 3\begin{document}$^3\Pi$\end{document} and 1\begin{document}$^5\Pi$\end{document} states, and finally dissociated to the Mg(\begin{document}$^3$\end{document}P\begin{document}$_\textrm{u}$\end{document})+O(\begin{document}$^3$\end{document}P\begin{document}$_\textrm{g}$\end{document}) along the 1\begin{document}$^5\Pi$\end{document} surface. The other two pathways are one-photon absorption of MgO(A\begin{document}$^1\Pi$\end{document}) state to MgO(G\begin{document}$^1\Pi$\end{document}) and MgO(4\begin{document}$^1\Pi$\end{document}) state to dissociate into Mg(\begin{document}$^3$\end{document}P\begin{document}$_\textrm{u}$\end{document})+O(\begin{document}$^3$\end{document}P\begin{document}$_\textrm{g}$\end{document}) and Mg(\begin{document}$^1$\end{document}S\begin{document}$_\textrm{g}$\end{document})+O(\begin{document}$^1$\end{document}S\begin{document}$_\textrm{g}$\end{document}), respectively. The anisotropy parameters of the dissociation pathways are related to the lifetime of the vibrational energy levels and the coupling of rotational and vibronic spin-orbit states. The total kinetic energy analysis gives \begin{document}$D_0$\end{document}(Mg\begin{document}$-$\end{document}O)=21645\begin{document}$\pm$\end{document}50 cm\begin{document}$^{-1}$\end{document}.     

非贵金属Co-N-C/MgO高效催化糠醛氧化酯化制糠酸甲酯

设计开发绿色、可持续的生物质资源高效转化制化学品催化过程具有重要的科学与应用研究价值.生物质基平台分子糠醛在分子氧存在下与甲醇发生氧化酯化,提供了一条糠酸甲酯的"非石油基"合成新路线.该反应采用贵金属/非贵金属催化体系,目前通常需要引入K2CO3或CH3ONa等碱性添加剂,以提高催化氧化酯化反应活性和选择性;但是存在活性组分流失、生成副产物及污染环境等问题,阻碍了其进一步应用.探索高性能非贵金属催化剂,实现无碱条件下糠醛高效氧化酯化,对于提高该生物质路线竞争力与推动工业化进程具有重要意义.     

Ni掺杂对Ni/MgO体系中电荷分配影响

采用密度泛函理论(DFT)计算方法,研究了载体Ni掺杂对Ni/MgO催化剂的电子结构及其对CH_4/CO_2重整反应的影响。结果显示,随着载体Ni:Mg比的增加,CH_4解离吸附和CH_x氧化过程的反应能垒均会随之升高,CH也更容易产生热解C,从而导致催化剂的活性和稳定性的下降。通过分析重整过程的Hirshfeld电荷分配,发现金属载体之间电子转移的方向会随着载体中Ni含量的上升由载体向Ni金属转移变为由Ni金属向载体转移。当Ni金属富电子时,反应物活化时电子的转移主要发生在表层Ni原子与吸附物种之间,参与氧化的CH_x物种为CH_2;当Ni金属缺电子时,反应物活化时Ni簇的电子结构基本保持稳定,电子主要在载体表层的Ni原子与反应物之间转移,CH是主要参与氧化的CH_x物种。     

Atomically Dispersed Pd Atoms on a Simple MgO Support with an Ultralow Loading for Selective Hydrogenation of Acetylene to Ethylene

We report a simple and efficient Pd/MgO catalyst loaded with ppm level of Pd (7.8 ppm) for semi-hydrogenation of acetylene to ethylene. The catalyst showed excellent performance with high acetylene conversion (97%), high ethylene selectivity (89%) and good stability. Moreover, the atomically dispersed Pd atoms are inactive for ethylene hydrogenation. Isotopic and FTIR results suggest that H₂ dissociates at isolated Pd atoms in a heterolytic manner forming O−H bond, which may account for the high selectivity.     

萘基相互连接的多孔碳纳米囊的制备及超电容性能

以萘为碳源, 采用MgO模板诱导耦合KOH裁剪技术制备了相互连接的多孔碳纳米囊(ICNC). 结果表明所制备的ICNC₂具有大的比表面积(1811 m²/g)、 高的压实密度(1.38 g/cm³)和微孔孔容含量(58.93%). 在对称的超级电容器(SC)中, ICNC₂电极的体积比容在不同电流密度下分别高达420.8 F/cm³(0.069 A/cm³)和315 F/cm³(27.6 A/cm³), 容量保持率为74.82%. 在38 W/L功率密度下, ICNC₂基SC的体积能量密度为14.6 W?h/L. 经过20000次循环后, 其体积比容仅衰减1.4%, 库伦效率为99.1%, 为从萘基小分子制备储能用功能碳材料提供了一种可行的方法.     

Efficient Synthesis of β-Hydroxy Sulfides and β-Hydroxy Sulfoxides Catalyzed by Cu/MgO Under Solvent-Free Conditions

Regio-, stereo-, and chemoselective ring opening of epoxides with thiols using Cu/MgO as a heterogeneous catalyst has efficiently been carried out to produce the corresponding β-hydroxy sulfides in excellent yields at room temperature under solvent-free conditions. The treatment of the epoxides with thiols and 50% aqueous H₂O₂ in the presence of the same catalyst at room temperature affords the β-hydroxy sulfoxides in excellent yields.     

Ion implantation for semiconductor processing

The potential advantages of ion implantation have been exploited in virtually every kind of semiconductor device. Several commercially important devices owe their existence to this technique.

Ion implantation provides precise control over the amount of dopant, concentration profile and lateral dimensions in device fabrication. The high degree of uniformity and reproducibility have made it possible to produce sophisticated devices and integrated circuits with high yield and tight tolerances. This is a truly planar process. It is possible to achieve high doping concentrations with relatively lower processing temperatures thereby avoiding lifetime degradation. The process is carried out in an inherently clean environment. A wide range of dopants is available and one is not limited by the particular properties of the substrate. There is great flexibility in choice of masking materials and self-alignment of doped regions in MOS devices is facilitated.

The increasing impact of ion implantation on device technology is discussed with reference to some recent developments. Specific commercially manufactured devices are mentioned.

Ion implantation machines continue to undergo development aimed at higher throughputs and cleaner vacuum. There is the need for greater reliability of machines. Effort is also directed at the development of low cost machines for dedicated applications.

Design of implanted devices continues to be an empirical process in some respects. The ability to accurately predict profile shapes in samples implanted (perhaps through a screen oxide) and subject to complicated post-implantation process steps, would cut down development time and costs.     

基于级联PPMgLN晶体的双倍/三倍频双波长激光器

本文演示了紧凑的绿色和近红外双色连续波激光光源,其发射波长分别为516 nm和775 nm。设计并制造了级联的周期性极化掺镁铌酸锂晶体,用于同时转换通信波长的二次谐波(SHG)和三次谐波(THG),可以在相同温度下获得绿色和近红外激光的输出。通过建立一个单程激光测量系统,在2 W泵浦功率下获得516 nm的0.15 mW绿光和775 nm的1.19 mW的光,晶体温度控制在30.8 ℃。实验结果将为单激光器泵浦的紧凑型双波长共线激光器提供重要的案例。     

涡流发生器污垢特性实验台的设计

为了研究涡流发生器的污垢特性设计了一个能够在线监测温度、流量以及压差进而可以直接得到污垢热阻的实验台。通过验证实验、准确性分析与误差分析,验证了实验台设计精度在允许的误差范围内。示例实验结果表明实验台具有研究涡流发生器的污垢特性、压力特性以及换热特性的功能。     

Fe/MgO催化裂解甲烷制备碳纳米带

采用溶胶-凝胶法制备了Fe/MgO催化剂(E)。以甲烷为碳源,通过催化化学气相沉积法在E上生长出了碳纳米带(F),其结构和形貌经SEM和TEM表征。在最佳制备条件[E中Fe负载量为50%,甲烷流速70mL·min-1,于870℃反应1 h]下制备的F宽度约135 nm,厚约89 nm,长度在几十微米量级。