Fabrication of MgO barrier for a magnetic tunnel junction in as-deposited state using amorphous RE–TM alloy

MgO (1 0 0) textured films on Fe buffer layer with (1 0 0) preferential orientation were prepared by a reactive facing targets sputtering system at a substrate temperature of 100 °C during MgO deposition. This process can allow fabrication of MgO (1 0 0) tunneling barrier layer without high-temperature annealing process after the sputter-deposition. In addition, FeCo (1 0 0) preferred orientation films prepared on GdFeCo layers were improved with GdFeCo thickness. MgO films deposited on Fe (or FeCo) buffer layers revealed apparent (1 0 0) preferred orientation at the early stage of the film growth. 3 nm-thick MgO films deposited on GdFeCo [100 nm]/Fe [3 nm] exhibited (1 0 0) texture. Magnetic characteristic of perpendicular-magnetic tunnel junction (P-MTJ) element with the structure of GdFeCo [100 nm]/Fe [3 nm]/MgO [3 nm]/Fe [3 nm]/TbFeCo [100 nm] exhibited high squareness ratio of 0.8 and coercivity of free layer as low as 117 Oe by anomalous Hall effect, and (1 0 0) preferred orientation of 3 nm-thick MgO layer was observed by an X-ray diffractometer.     

Removal of scratch on the surface of MgO single crystal substrate in chemical mechanical polishing process

Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2 vol.% phosphoric acid (H₃PO₄) and 10-20 nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed.     

单层FeSe薄膜/氧化物界面高温超导

单层FeSe/SrTiO₃界面增强超导的发现为理解高温超导机理提供了一个新的途径,也为实现新的高温超导体开拓了新思路.本文通过在SrTiO₃（001）表面高温沉积Mg进而沉积单层FeSe薄膜,制备出了FeSe/MgO双层/SrTiO₃异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性,观测到约14–15 meV的超导能隙,比体相FeSe超导能隙值增大了5–6倍,与K掺杂双层FeSe/SrTiO₃的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO₂之后的一个新界面超导体系,为研究界面高温超导机理提供了新载体.     

Determination of Arsenic and Mercury in Various Environmental Matrices by Chemical Neutron Activation Analysis

Chemical neutron activation analysis was developed for determining trace amounts of arsenic and mercury in a variety of environmental matrices, including water, sediment, rock, plants, animal organs, etc: The adsorption procedure via magnesium oxide as the agent was applied to preconcentrate arsenic from the digested environmental matrices where arsenic in the form of As(V) ion could be highly efficiently adsorbed by hydrous magnesium oxide. On the other hand, the extraction procedure via lead diethyldithiocarbamate as the agent was applied to preconcentrate mercury from the digested environmental matrices where mercury in the form of Hg(II) ion could be highly efficiently extracted into the solution of lead diethyldithiocarbamte in dichloromethane. Both of the preconcentrated materials prepared ultimately in the solid states, i.e., arsenic in magnesium oxide and mercury in lead diethyldithiocarbamte were taken to be neutron irradiated. The γ spectra of the preconcentrated samples irradiated generally showed clear peaks of the product radionuclides from arsenic or from mercury by the different separation procedures. The possible interfering elements such as Na, Br, etc., were prominently minimized in respect of most of the preconcentrated samples. The reliability and accuracy of the proposed analytical methods for detecting arsenic and mercury can be confirmed by the assay of commercial standard reference materials including sediment, rock, plants, and animal organs.     

天然气二氧化碳转化制合成气的研究──催化剂抗积炭性能(英文)

采用脉冲色谱技术、ＸＲＤ、ＴＰＲ和ＸＰＳ等方法研究了在天然气二氧化碳转化制合成气反应中催化剂的抗积炭性能。实验结果表明,在Ｎ　Ａｌ２Ｏ３催化剂中添加ＣｅＯ２和ＭｇＯ助剂（催化剂记为Ｎｉ／ＡＲＭ）能有效抑制甲烷脱氢反应,提高二氧化碳消炭能力,增加催化剂的抗积炭性能。其主要原因是,添加ＣｅＯ２和ＭｇＯ助剂增加了活性组分镍的分散度,加强了活性组分和载体的相互作用。改性后的Ｎｉ／ＡＲＭ催化剂在１０２３Ｋ、二氧化碳／天然气／氧气比为２．４／０．１以及１１２３Ｋ、二氧化碳／天然气／氧气比为１．４／１／０．０５的条件下反应８００小时后活性不降低,产物中合成气（ＣＯ＋Ｈ２）摩尔百分含量始终保持在９４－９６％左右。说明该催化剂具有较高的活性、选择性和抗积炭性。     

Theoretical study of water coverage on MgO surfaces

Ab initio and semiempirical calculations have been performed on an (MgO)₁₆ cluster model in order to study the effects of water coverage on pure MgO (100) surfaces. The geometries of various adsorbed water molecules have been optimized and the binding energies, charge transfer, and preferential sites of interaction analyzed. We have used Mulliken and natural bond population analysis methods in order to analyze charge distributions and the direction of charge transfer processes. We have also investigated the effects of low and high coverage on energy gaps, density of states, self‐consistent field (SCF) orbital energies, and stretching frequencies. ©1999 John Wiley & Sons, Inc. Int J Quant Chem 71: 153–165, 1999     

中子辐照MgO晶体的损伤和恢复

用剂量为5.74×1018cm-2的中子对MgO晶体进行了辐照,利用吸收光谱、荧光光谱等手段观测了中子辐照引起的损伤及其恢复.中子辐照产生了大量的阴离子单空位(F+)、阴离子双空位(F2)及其它更高阶的缺陷.通过等时退火,这些缺陷发生了一系列消长和转型的变化过程,并最终在900℃左右全部消失.实验结果表明,吸收峰位于573nm的色心是与位于424nm、451nm的色心类型不同的更高阶的阴离子空位聚集态.     

Lithium Promotes Acetylide Formation on MgO During Methane Coupling Under Non-Oxidative Conditions

A prototypical material for the oxidative coupling of methane (OCM) is Li/MgO, for which Li is known to be essential as a dopant to obtain high C₂ selectivities. Herein, Li/MgO is demonstrated to be an effective catalyst for non-oxidative coupling of methane (NOCM). Moreover, the presence of Li is shown to favor the formation of magnesium acetylide (MgC₂), while pure MgO promotes coke formation as evidenced by solid-state ¹³C NMR, thus indicating that Li promotes C−C bond formation. Metadynamic simulations of the carbon mobility in MgC₂ and Li₂C₂ at the density functional theory (DFT) level show that carbon easily diffuses as a C₂ unit at 1000 °C. These insights suggest that the enhanced C₂ selectivity for Li-doped MgO is related to the formation of Li and Mg acetylides.