金属衬底在石墨烯化学气相沉积生长中的作用

以过渡金属为催化衬底的化学气相沉积法(Chemical Vapor Deposition，CVD)已经可以制备与机械剥离样品相媲美的石墨烯，是实现石墨烯工业应用的关键技术之一。原子尺度理论研究能够帮助我们深刻理解石墨烯生长机理，为实验现象提供合理的解释，并有可能成为将来实验设计的理论指导。本文从理论计算的角度，总结了各种金属衬底在石墨烯CVD生长过程中的各种作用与相应的机理，包括在催化碳源裂解、降低石墨烯成核密度等，催化加快石墨烯快速生长，修复石墨烯生长过程中产生的缺陷，控制外延生长石墨烯的晶格取向，以及在降温过程中石墨烯褶皱与金属表面台阶束的形成过程等。在本文最后，我们对当前石墨烯生长领域中亟需解决的理论问题进行了深入探讨与展望。     

LiB6Si: An indirect band gap semiconductor

Using first-principle calculations, mechanical properties, electronic structure, and Raman spectra of LiB₆Si structure were investigated. The band structures calculated by GGA-PBE and HSE06 methods reveal that LiB₆Si is an indirect band gap semiconductor. The band gap estimated by HSE06 method is about 2.24 eV, which is in good agreement with that of experimental value 2.27 eV. The calculated tensile stress-strain curves of LiB₆Si reveal that [010] direction is the cleavage direction under tensile strains. The calculated Raman spectra of LiB₆Si are also in good agreement with that of measured. The position of the band gap may provide a basis for further photocatalysis research on LiB₆Si.     

High-pressure phase transitions of Cu2O

In the present study, we extensively explored the crystal structures of Cu₂O on increasing the pressure from 0 GPa to 24 GPa using the first-principles density functional calculations. A series of pressure-induced structure phase transitions of Cu₂O are examined. The calculated results show that the phase transitions (Pn-3m phase → R-3m phase → P-3m1 phase) occur at 5 GPa and 12 GPa, respectively. The P-3m1 phase is found to be the metallic phase via band-gap closure under high pressure.     

Characterization and photocatalytic activity of Fe- and N-co-deposited TiO2 and first-principles study for electronic structure

Titanium dioxide (TiO₂), co-deposited with Fe and N, is first implanted with Fe by a metal plasma ion implantation (MPII) process and then annealed in N₂ atmosphere at a temperature regime of 400-600 °C. First-principle calculations show that the (Fe, N) co-deposited TiO₂ films produced additional band gap levels at the bottom of the conduction band (CB) and on the top of the valence band (VB). The (Fe, N) co-deposited TiO₂ films were effective in both prohibiting electron-hole recombination and generating additional Fe-O and N-Ti-O impurity levels for the TiO₂ band gap. The (Fe, N) co-deposited TiO₂ has a narrower band gap of 1.97 eV than Fe-implanted TiO₂ (3.14 eV) and N-doped TiO₂ (2.16 eV). A significant reduction of TiO₂ band gap energy from 3.22 to 1.97 eV was achieved, which resulted in the extension of photocatalytic activity of TiO₂ from UV to Vis regime. The photocatalytic activity and removal rate were approximately two-fold higher than that of the Fe-implanted TiO₂ under visible light irradiation.     

The characteristics of self-assemble N2O monolayer

The first-principle technique has been employed to determine the atomic structure of nitrous oxide (N₂O) monolayer. The potential structures of N₂O monolayer have been proposed. The calculation shows that the monolayer is a self-assembly system, in which the basic structure unit is the dislocated molecular chain.     

Structural and electronic properties of type-I and type-VIII Ba8Ga16Sn30 clathrates under compression

The total energy and electronic structures for type-I (β phase) and type-VIII (α phase) Ba₈Ga₁₆Sn₃₀ clathrates under hydrostatic pressure have been investigated using density functional theory (DFT) calculations. It was found that the type-VIII phase is more stable than the type-I one at ambient conditions and that β→α phase transition can not occur under hydrostatic pressure. The band structures show that the type-I and type-VIII Ba₈Ga₁₆Sn₃₀ are indirect semiconductors with band gaps of 0.24 eV and 0.19 eV, respectively. The results suggested that type-I clathrate Ba₈Ga₁₆Sn₃₀ has a larger value of the thermoelectric (TE) power than that of type-VIII clathrate. We found that pressure tuning changes the k-point of conduction band minimum (CBM) in the Brillouin zone for β-phase, but it is not the case for α-phase. Furthermore, the results show that the pressure can change the interaction between guest atoms and the host lattice, and consequently results in the decrease of the band gap of β-phase and the increase of the band gap of α-phase, indicating that the pressure effect can play an important role in the magnitude of the TE power.     

Instability Origin and Improvement Scheme of Facial Alq3 for Blue OLED Application

Degradation phenomenon and poor stability of tris(8-hydroxyquinoline) aluminum(III)(Alq₃)-based organic light-emitting diodes(OLEDs) have attracted much attention. In this paper, we discussed the origin of instability of the facial Alq₃-based blue luminescent OLEDs with the help of first-principles calculation. The results show that environmental humidity seriously affects the luminescence stability of Alq₃-based OLEDs. H₂O molecules in environment can be firmly bound to the oxygen atoms of the facial Alq₃, which then act as starting points for further degradation of Alq₃. Moreover, the interactions between facial Alq₃ and different cathode metal layers were investigated to explain the experiment phenomenon. A design guideline for diminishing the strong attraction from oxygen atoms can be proposed to protect Alq₃ and improve the stability of materials applied in OLEDs.     

(Mg(BH_4)_2)_n团簇结构与性质的密度泛函理论研究

采用了密度泛函理论中的杂化密度泛函B3LYP方法,在6-31G*基组水平上对[Mg(BH_4)_2]_n(n=1-3)团簇的结构进行了优化,几何结构优化时自旋多重度取了1、3、5等多种情况进行计算.最后对最稳定结构的振动特性、成键特性、电荷特性和稳定性等进行了研究.结论表明:团簇最稳定结构易形成链状结构,其中Mg-B键长为0.210～0.253 nm,-BH_4基中靠近Mg原子处的B-H键长约为0.125 nm、远离Mg原子处的B-H键长为0.119 nm.对比团簇和晶体的光谱结构表明,-BH_4基在团簇和晶体中结构基本一致. Mg原子的自然电荷在1.687～1.757e之间,B原子的自然电荷在-0.702～-0.788e之间,H原子基本不参与电荷转移,其自然电荷在-0.094～0.070e之间.团簇中Mg原子和-BH_4基之间相互作用呈现较强的离子性,Mg(BH_4)_2团簇具有相对较高的动力学稳定性.     

First-principles Study of Mechanical and Electronic Properties of Co-Sn Intermetallics for Lithium Ion Battery Anode

The equilibrium structures, formation energy, mechanical properties and electronic properties of Co-Sn intermetallics have been systemically studied by first-principles study. The results show that the CoSn phase is more thermodynamically stable than any other stoichiometry of Co-Sn intermetallics. With the increasing of Co content in Co-Sn intermetallics, the mechanical properties change into brittle behavior from ductility character. Adding proper amount of Co to Co-Sn intermetallics can improve the cycle performance for lithium ion battery anode. However, high Co content will lead to a poor cycle performance for Co-Sn intermetallics.     

Effects of enhanced electronic correlation on magnetic properties of light non-metallic element (B,C, N,and O)-doped CuCl: A first-principles study

Based on density functional calculations within both standard generalized gradient approximation and plus on-site Coulomb interactions approaches, we have investigated the electronic structure and magnetic properties of the first-row element-doped CuCl semiconductors. The electronic correlations in both 2p and 3d orbitals are enhanced by adding the on-site Coulomb repulsion (Hubbard U and Hund exchange J). After a comparative study, we find that, for both standard and beyond approaches, B-doped CuCl is a half-metallic magnet with majority-spin impurity bands touching the Fermi level, C-doped CuCl is a magnetic semiconductor, and N-doped CuCl is a half-metallic magnet with minority-spin impurity bands crossing the Fermi level. Nevertheless, for O-doped CuCl, it transforms from a nonmagnetic semiconductor to a half-metallic magnet with metallic up-spins by considering the correlation effects. The calculation shows that the enhanced electronic correlation not only corrects the error of band-gap, but also influences the magnetic ground state and the distribution of local magnetic moments. The location of impurity bands with different dopants was understood based on the elements' electronegativity and interaction between dopant and host atoms. Strong hybridization between the dopant's 2p states and the filled 3d orbitals of adjacent Cu yields the main contribution to magnetization.