大尺寸电阻加热式碳化硅晶体生长热场设计与优化

大尺寸低缺陷碳化硅(SiC)单晶体是功率器件和射频(RF)器件的重要基础材料,物理气相传输(physical vapor transport, PVT)法是目前生长大尺寸SiC单晶体的主要方法。获得大尺寸高品质晶体的核心是通过调节组分、温度、压力实现气相组分在晶体生长界面均匀定向结晶,同时尽可能减小晶体的热应力。本文对电阻加热式8英寸(1英寸=2.54 cm)碳化硅大尺寸晶体生长系统展开热场设计研究。首先建立描述碳化硅原料受热分解热质输运及其多孔结构演变、系统热输运的物理和数学模型,进而使用数值模拟方法研究加热器位置、加热器功率和辐射孔径对温度分布的影响及其规律,并优化热场结构。数值模拟结果显示,通过优化散热孔形状、保温棉的结构等设计参数,电阻加热式大尺寸晶体生长系统在晶锭厚度变化、多孔介质原料消耗的情况下均能达到较低的晶体横向温度梯度和较高的纵向温度梯度。     

拓扑材料中的超导

近来,人们在凝聚态体系中发现了由拓扑不变量定义的物相,其中最重要的有拓扑绝缘体、拓扑半金属和拓扑超导体等.这些物相的拓扑性质由非平凡的拓扑数描述,相应的材料被称为拓扑材料,具有诸多新奇的物理特性.其中拓扑超导体由于边界上有满足非阿贝尔统计的Majorana零能模,成为实现拓扑量子计算的主要候选材料.除了探索本征的拓扑超导体外,由于拓扑性质上的相似性,在不超导的拓扑材料中调制出超导自然成为了实现拓扑超导的重要手段.目前,人们发展了栅极调制、掺杂、高压、近邻效应调制和硬针尖点接触等多种技术,已经成功地在许多拓扑绝缘体和半金属中诱导出了超导,并对超导的拓扑性和Majorana零能模进行了研究.本文回顾了本征拓扑超导候选材料,以及拓扑绝缘体和半金属中诱导出超导的代表性工作,评述了不同实验手段的优势和缺陷、分析了其超导拓扑性的证据,并提出展望.     

Computing upward topological book embeddings of upward planar digraphs

We describe a unified approach for studying book, point-set, and simultaneous embeddability problems of upward planar digraphs. The approach is based on a linear time strategy to compute an upward planar drawing of an upward planar digraph such that all vertices are collinear. Besides having impact in relevant application domains of graph drawing and computational geometry, the presented results open new research directions in the area of upward planarity with constraints of the positions of the vertices.     

Optical reflection properties for the interface associated with Chern insulator and chiral metamaterial

Based on the topological nature of Chern insulator and magnetoelectric coupling of chiral metamaterial, we investigate the electrodynamics for the interface associated with the two media. The Fresnel coefficients of the interface between Chern insulator and chiral metamaterial, as well as the corresponding polarization rotation angles, are derived. The reflection characteristics of the linearly polarized incident wave at the interface, such as complete polarization conversion and change of polarization state, are discussed. Under the combined influence of Chern insulator and chiral metamaterial, the partial polarization conversion may be enhanced to the complete polarization conversion, and the chiral metamaterial may compensate for the suppression effect of longitudinal conductivity of Chern insulator on the polarization conversion.     

Dynamically Induced Excitonic Instability in Pumped Dirac Materials

Driven and non-equilibrium quantum states of matter have attracted growing interest in both theoretical and experimental studies in condensed matter physics. Recent progress in realizing transient collective states in driven or pumped Dirac materials (DMs) is reviewed herein. In particular, the focus is on optically pumped DMs which are a promising platform for transient excitonic instabilities. Optical pumping combined with the linear (Dirac) dispersion of the electronic spectrum offers a knob for tuning the effective interaction between the photoexcited electrons and holes, and thus provides a way of reducing the critical coupling for excitonic instability. As a result, a transient excitonic condensate could be achieved in a pumped DM while it is not feasible in equilibrium. A unifying theoretical framework is provided for describing transient collective states in 2D and 3D DMs. The experimental signatures are described and numerical estimates of the size of the dynamically induced excitonic gaps and the values of the critical temperatures for several specific systems, are summarized. In addition, general guidelines for identifying promising material candidates are discussed. Finally, comments are provided regarding recent experimental efforts in realizing transient excitonic condensate in pumped DMs, and outstanding issues and possible future directions are outlined.     

填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs₄Sb₁₂晶体中由于导电电子与Ce³⁺ 4f¹电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs₄Sb₁₂物理性质，如近藤绝缘体行为、Ce³⁺磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs₄Sb₁₂进行测量时，可以得到不同温度下CeOs₄Sb₁₂的非弹性中子散射谱.结果表明CeOs₄Sb₁₂中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs₄Sb₁₂为近藤绝缘体.中子测量得出CeOs₄Sb₁₂德拜温度为317 K. 关键词： 非弹性中子散射 填充式方钴矿 近藤绝缘体     

A note on strong β-I-sets and strongly β-I-continuous functions

Summary In [6], we introduced and investigated the notions of strong β-I-open sets and strong β-I-continuous functions in ideal topological spaces. In this paper, we investigate further their important properties.     

On the Existence of Solutions to Vector Quasivariational Inequalities and Quasicomplementarity Problems with Applications Break to Traffic Network Equilibria

For vector quasivariational inequalities involving multifunctions in topological vector spaces, an existence result is obtained without a monotonicity assumption and with a convergence assumption weaker than semicontinuity. A new type of quasivariational inequality is proposed. Applications to quasicomplementarity problems and traffic network equilibria are considered. In particular, definitions of weak and strong Wardrop equilibria are introduced for the case of multivalued cost functions.     

A Fixed Point Theorem for Multi—valued Composite Increasing Operators

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低复杂度序列的维数

本文研究符号空间中由零拓扑熵序列组成的集合.通过构造适当的自相似集,证明了该集合的盒维数为1,而Hausdorff维数为0.